BC639G ON Semiconductor, BC639G Datasheet - Page 2

• Manufacturer Part Number: BC639G
• Description: TRANSISTOR NPN GP 80V 1A TO-92
• Manufacturer: ON Semiconductor

Specifications of BC639G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 25
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
Specifications Brochure, BRD8011/D.
Collector − Emitter Breakdown Voltage (Note 1)
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)
Collector − Base Breakdown Voltage
Emitter − Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector − Emitter Saturation Voltage
Base − Emitter On Voltage
Current Gain − Bandwidth Product
Output Capacitance
Input Capacitance
BC637G
BC637RL1G
BC639G
BC639RL1G
BC639ZL1G
BC639−16ZL1G
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(V
(V
C
C
C
E
C
C
C
C
C
C
CB
CB
CB
EB
= 10 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 100 mAdc, I
= 5.0 mAdc, V
= 150 mAdc, V
= 500 mA, V
= 500 mAdc, I
= 500 mAdc, V
= 50 mAdc, V
= 0.5 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
= 10 Vdc, I
C
B
Device
CE
E
E
E
B
E
C
CE
= 0)
= 0)
B
CE
= 0)
= 0, T
= 0, f = 1.0 MHz)
CE
CE
= 0)
= 0)
= 0, f = 1.0 MHz)
= 2.0 V)
= 50 mAdc)
= 2.0 Vdc, f = 100 MHz)
= 2.0 Vdc)
= 2.0 Vdc)
= 2.0 Vdc)
A
Characteristic
= 125°C)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
BC639−16ZLT1
BC639−16
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
BC637
BC639
BC637
BC639
BC637
BC639
2
V
V
V
V
Symbol
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
I
BE(on)
C
CBO
h
C
f
FE
T
ob
ib
Min
120
100
5.0
60
80
60
80
25
40
40
25
−
−
−
−
−
−
−
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
2000 / Ammo Box
5000 Units / Bulk
5000 Units / Bulk
Typ
200
7.0
50
Shipping
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
†
Max
100
160
160
250
0.5
1.0
10
−
−
−
−
−
−
−
−
−
−
−
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
−