MMBT4403M3T5G ON Semiconductor, MMBT4403M3T5G Datasheet - Page 2

• Manufacturer Part Number: MMBT4403M3T5G
• Description: TRANS PNP SW 40V 600MA SOT-723
• Manufacturer: ON Semiconductor

Specifications of MMBT4403M3T5G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 265mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
(Note 3)
(Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
Current −Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
- 16 V
+2 V
0
< 2 ns
Figure 1. Turn−On Time
10 to 100 ms,
DUTY CYCLE = 2%
1.0 kW
Characteristic
SWITCHING TIME EQUIVALENT TEST CIRCUIT
(I
(V
(V
(I
(I
(I
(I
(T
C
C
C
C
C
CB
BE
A
= −20 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= 25°C unless otherwise noted)
= −0.5 Vdc, I
= −10 Vdc, I
I
(V
(V
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
C
C
C
C
C
C
- 30 V
200 W
CC
CC
= −150 mAdc, I
CE
CE
= −0.1 mAdc, I
= −1.0 mAdc, I
= −0.1 mAdc, I
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −150 mAdc, V
= −500 mAdc, V
= −150 mAdc, I
= −500 mAdc, I
= −150 mAdc, I
= −500 mAdc, I
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
= −30 Vdc, I
= −30 Vdc, V
= −35 Vdc, V
= −35 Vdc, V
I
B1
http://onsemi.com
C
E
C
S
CE
CE
CE
CE
CE
= I
* < 10 pF
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= −10 Vdc, f = 100 MHz)
B2
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −15 mAdc)
2
C
B1
B
E
C
CE
EB
EB
EB
B
B
B
B
CE
CE
= −150 mAdc,
CE
CE
= 0)
= 0)
= 0)
= −15 mAdc)
= −15 mAdc)
= −50 mAdc)
= −15 mAdc)
= −50 mAdc)
= −1.0 Vdc)
= −2.0 Vdc,
= −0.4 Vdc)
= −0.4 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −2.0 Vdc)
= −2.0 Vdc)
+14 V
-16 V
0
Figure 2. Turn−Off Time
1.0 to 100 ms,
DUTY CYCLE = 2%
V
V
V
Symbol
V
V
< 20 ns
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
I
I
h
C
C
h
BEV
CEX
h
h
h
f
t
t
t
FE
t
T
oe
cb
eb
re
fe
d
s
ie
r
f
1.0 kW
−0.75
−5.0
Min
−40
−40
100
100
200
1.5
0.1
1.0
30
60
20
60
−
−
−
−
−
−
−
−
−
−
−
+ 4.0 V
−0.75
−0.95
Max
−0.1
−0.1
−0.4
−1.3
300
500
100
225
8.5
8.0
30
15
15
20
30
−
−
−
−
−
−
−
−
- 30 V
200 W
C
mMhos
X 10
mAdc
mAdc
S
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
* < 10 p
pF
pF
ns
ns
−
−
− 4