MMBTA55LT1G ON Semiconductor, MMBTA55LT1G Datasheet

TRANS DRIVER SS PNP 60V SOT23

MMBTA55LT1G

Manufacturer Part Number
MMBTA55LT1G
Description
TRANS DRIVER SS PNP 60V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTA55LT1G

Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
225mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
- 0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 10 mA at 1 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage
60V
Emitter-base Voltage
4V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBTA55LT1GOS
MMBTA55LT1GOS
MMBTA55LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTA55LT1G
Manufacturer:
ON Semiconductor
Quantity:
1 100
Part Number:
MMBTA55LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBTA55LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBTA55LT1G,
MMBTA56LT1G
Driver Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 6
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−500
−4.0
Max
−60
−80
−60
−80
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
2xx = Device Code
M
G
ORDERING INFORMATION
MARKING DIAGRAM
= Date Code*
= Pb−Free Package
BASE
http://onsemi.com
x = H for MMBTA55LT1
xx = GM for MMBTA56LT1
1
1
1
CASE 318
STYLE 6
SOT−23
2xx M G
COLLECTOR
2
EMITTER
G
Publication Order Number:
3
2
3
MMBTA55LT1/D

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MMBTA55LT1G Summary of contents

Page 1

... MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage MMBTA55 MMBTA56 Collector −Base Voltage MMBTA55 MMBTA56 Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note −1.0 mAdc Emitter −Base Breakdown Voltage (I = −100 mAdc Collector Cutoff Current (V = −60 Vdc, ...

Page 3

25°C J 100 -2.0 -3.0 -5.0 -7.0 -10 -20 - COLLECTOR CURRENT (mA) C Figure 2. Current−Gain — Bandwidth Product 1.0 k 700 500 300 200 ...

Page 4

... I , COLLECTOR CURRENT (mA) C Figure 10. Base−Emitter Temperature Coefficient ORDERING INFORMATION Device Order Number MMBTA55LT1G MMBTA55LT3G MMBTA56LT1G MMBTA56LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. -1.0 -0.8 - ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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