MSD42SWT1G ON Semiconductor, MSD42SWT1G Datasheet

MSD42SWT1G

Manufacturer Part Number

MSD42SWT1G

Description

TRANS GP SS NPN 300V SOT323

Manufacturer

ON Semiconductor

Datasheet

1.MSD42SWT1G.pdf (2 pages)

Specifications of MSD42SWT1G

Transistor Type

NPN

Current - Collector (ic) (max)

150mA

Voltage - Collector Emitter Breakdown (max)

300V

Vce Saturation (max) @ Ib, Ic

500mV @ 2mA, 200mA

Dc Current Gain (hfe) (min) @ Ic, Vce

25 @ 1mA, 10V

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SC-70-3, SOT-323-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

Other names

MSD42SWT1GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MSD42SWT1G

Manufacturer:

Quantity:

3 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MSD42SWT1G

Manufacturer:

Quantity:

30 000

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MSD42SWT1G

NPN Silicon General

Purpose High Voltage

Transistor

amplifier applications. This device is housed in the SC-70/SOT-323

package which is designed for low power surface mount applications.

Features



Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum

2. Pulse Test: Pulse Width  300 ms, D.C.  2%.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

 Semiconductor Components Industries, LLC, 2010

October, 2010 - - Rev. 2

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - - Continuous

Power Dissipation (Note 1)

Junction Temperature

Storage Temperature Range

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter- -Base Cutoff Current

DC Current Gain (Note 2)

Collector-Emitter Saturation Voltage

This NPN Silicon Planar Transistor is designed for general purpose

Compliant

These Devices are Pb- - Free, Halogen Free/BFR Free and are RoHS

recommended footprint.

(Note 2) (I

= 2.0 mAdc)

= 100 mAdc, I

= 1.0 mAdc, I

= 100 mAdc, I

= 300 Vdc, I

= 6.0 Vdc, I

= 10 Vdc, I

Characteristic

= 200 mAdc,

Rating

= 1.0 mAdc)

= 30 mAdc)

= 0)

= 25C)

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

(BR)CEO

(BR)CBO

(BR)EBO

CE(sat)

CBO

EBO

FE1

FE2

stg

- - 55 to +150

Min

300

6.0

- -

Value

Max

300

150

6.0

Max

200

0.1

0.5

- -

mAdc

Unit

Vdc

C

- -

MSD42SWT1G SC- -70/SOT- -323

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

*Date Code orientation may vary depending

upon manufacturing location.

(Note: Microdot may be in either location)

ORDERING INFORMATION

BASE

MARKING DIAGRAM

http://onsemi.com

SC- - 70 (SOT- - 323)

= Device Code

= Date Code*

= Pb- -Free Package

COLLECTOR

(Pb- -Free)

Package

CASE 419

STYLE 3

D4 M G

Publication Order Number:

EMITTER

3000/Tape & Reel

MSD42SWT1/D

Shipping

†

Related parts for MSD42SWT1G

MSD42SWT1G Summary of contents

Page 1

... Min Max Unit V 300 - - Vdc (BR)CEO V 300 - - Vdc (BR)CBO V 6 Vdc (BR)EBO 0.1 mA CBO 0.1 mA EBO MSD42SWT1G SC- -70/SOT- -323 - - h 25 200 FE1 †For information on tape and reel specifications, FE2 0.5 Vdc CE(sat) 1 http://onsemi.com COLLECTOR BASE EMITTER SC (SOT- - 323) CASE 419 ...

Page 2

... A1 *For additional information on our Pb- -Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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