MMBT2222LT1G ON Semiconductor, MMBT2222LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT2222LT1G
• Description: TRANS GP SS NPN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT2222LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2222LT1GOS; MMBT2222LT1GOS; MMBT2222LT1GOSTR

Initial Product/Process Change Notification #16009
AFFECTED DEVICE LIST:
PART
BAS16LT1
BAS16LT1G
BAS16LT3
BAS16LT3G
BAS21LT1
BAS21LT1G
BAS21LT3
BAS21LT3G
BAS21SLT1G
BAV70LT1
BAV70LT1G
BAV70LT3
BAV70LT3G
BAV99LT1
BAV99LT1G
BAV99LT3
BAV99LT3G
BAW56LT1
BAW56LT1G
BAW56LT3
BAW56LT3G
BC807-25LT1
BC807-25LT1G
BC807-25LT3
BC807-25LT3G
BC807-40LT1
BC807-40LT1G
BC807-40LT3
BC807-40LT3G
BC817-25LT1
BC817-25LT1G
BC817-25LT3
BC817-25LT3G
BC817-40LT1
BC817-40LT1G
BC817-40LT3
BC817-40LT3G
BC846BLT1
BC846BLT1G
BC846BLT3
BC846BLT3G
BC847BLT1
BC847BLT1G
BC847BLT3
BC847BLT3G
BC847CLT1
BC847CLT1G
BC847CLT3
BC847CLT3G
BC848BLT1
BC848BLT1G
BC848BLT3
Issue Date: 08 May 2007
Rev.07-02-06
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