BC847BLT1G ON Semiconductor, BC847BLT1G Datasheet - Page 11

• Manufacturer Part Number: BC847BLT1G
• Description: TRANS NPN LP 100MA 45V SOT23
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of BC847BLT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage(max): 50V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Power Dissipation: 300mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 100 mA
• Current, Gain: 450
• Frequency: 100 MHz
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 45 V
• Voltage, Collector To Base: 50 V
• Voltage, Collector To Emitter: 45 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BC847BLT1GOSTR

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Issue Date: 11 Jul 2008
Rev.07-02-06
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