BCW65ALT1G ON Semiconductor, BCW65ALT1G Datasheet - Page 2

• Manufacturer Part Number: BCW65ALT1G
• Description: TRANS NPN GP 32V 800MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BCW65ALT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 20nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 32V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 800mA
• Dc Current Gain (min): 35
• Power Dissipation: 300mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCW65ALT1G; BCW65ALT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain — Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Turn−On Time
Turn−Off Time
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
C
CE
CE
EB
CB
EB
CE
= 10 mAdc, I
= 10 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 10 mAdc, V
= 100 mAdc, V
= 500 mAdc, V
= 100 mAdc, V
= 10 mAdc, V
= 100 mAdc, V
= 500 mAdc, V
= 500 mAdc, I
= 100 mAdc, I
= 500 mAdc, I
= 20 mAdc, V
= 150 mAdc, R
= I
= 32 Vdc, I
= 32 Vdc, I
= 4.0 Vdc, I
= 10 Vdc, I
= 0.5 Vdc, I
= 5.0 Vdc, I
B2
= 15 mAdc)
C
B
EB
E
E
E
C
C
CE
CE
CE
C
= 0)
B
B
B
CE
CE
= 0)
= 0)
= 0, T
CE
CE
CE
CE
= 0, f = 1.0 MHz)
L
= 0)
= 0, f = 1.0 MHz)
= 0.2 mAdc, R
= 50 mAdc)
= 10 mAdc)
= 50 mAdc)
= 0)
= 1.0 Vdc)
= 1.0 Vdc)
= 10 Vdc, f = 100 MHz)
= 150 W)
= 10 Vdc)
= 10 Vdc)
= 1.0 Vdc)
= 2.0 Vdc)
= 1.0 Vdc)
= 2.0 Vdc)
A
= 150°C)
Characteristic
S
= 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
BCW65ALT1
BCW65CLT1
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CES
(BR)EBO
CE(sat)
I
I
BE(sat)
C
C
h
h
CES
EBO
NF
t
t
f
obo
on
off
FE
FE
ibo
T
Min
100
180
250
100
100
5.0
32
60
35
75
35
80
−
−
−
−
−
−
−
−
−
−
−
Typ
0.7
0.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
250
630
100
400
2.0
20
20
20
12
80
10
−
−
−
−
−
−
−
−
−
−
−
−
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
ns
ns
−
−