BC 817K-16 E6327 Infineon Technologies, BC 817K-16 E6327 Datasheet - Page 5
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BC 817K-16 E6327
Manufacturer Part Number
BC 817K-16 E6327
Description
TRANSISTORS NPN AF 45V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BC_817K-25_E6327.pdf
(11 pages)
Specifications of BC 817K-16 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
500mW
Frequency - Transition
170MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
500 mW
Maximum Operating Frequency
170 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SP000271788
DC current gain h
V
h
DC current gain h
V
h
FE
FE
CE
CE
-grp.16
-grp.40
10
10
10
10
10
10
= 1 V
= 1 V
3
2
1
3
2
1
10
10
-5
-5
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10
10
-4
-4
FE
FE
10
10
= ƒ ( I
= ƒ ( I
-3
-3
C
C
10
10
)
)
-2
-2
10
10
-1
-1
I
I
C
C
A
A
10
10
0
0
5
DC current gain h
V
h
Collector-emitter saturation voltage
I
Ι
C
C
FE
CE
= ƒ ( V
10
mA
10
10
10
10
-grp.25
10
10
10
5
5
5
= 1 V
-1
3
2
1
0
3
2
1
10
0
BC 817/818
CEsat
-5
105 °C
85 °C
65 °C
25 °C
-40 °C
), h
10
0.2
-4
FE
150 ˚C
-50
FE
25 ˚C
= 10
10
˚C
= ƒ ( I
BC817.../BC818...
-3
0.4
C
10
)
-2
0.6
2008-04-11
10
EHP00223
-1
V
V
I
CEsat
C
A
0.8
10
0