BC850BLT1G ON Semiconductor, BC850BLT1G Datasheet - Page 10

• Manufacturer Part Number: BC850BLT1G
• Description: TRANSISTOR NPN 45V 100MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BC850BLT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2.0
1.6
1.2
0.8
0.4
7.0
5.0
3.0
2.0
1.0
10
0
0.02
0.4 0.6
Figure 29. Collector Saturation Region
10 mA
I
0.8
C
=
1.0
V
R
20 mA
, REVERSE VOLTAGE (VOLTS)
Figure 31. Capacitances
I
C
I
0.1
B
=
, BASE CURRENT (mA)
2.0
I
C
C
= 50 mA
ib
4.0
C
ob
6.0
1.0
T
8.0
A
I
BC847C, BC848C, BC849C, BC850C
C
= 25°C
10
= 100 mA
I
C
= 200 mA
T
A
20
= 25°C
http://onsemi.com
10
20
40
10
400
300
200
100
80
60
40
30
20
1.0
1.2
1.6
2.0
2.4
2.8
0.5
0.2
Figure 32. Current−Gain − Bandwidth Product
0.7 1.0
-55°C to +125°C
Figure 30. Base−Emitter Temperature
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mA)
2.0
1.0
3.0
Coefficient
5.0
7.0
10
10
20
V
T
A
CE
= 25°C
= 10 V
30
50
100