2SC4617G ON Semiconductor, 2SC4617G Datasheet - Page 2

• Manufacturer Part Number: 2SC4617G
• Description: TRANS NPN GP 50V 100MA SC75-3
• Manufacturer: ON Semiconductor

Specifications of 2SC4617G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 60mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 125mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (I
Emitter-Base Breakdown Voltage (I
Collector-Base Cutoff Current (V
Emitter-Base Cutoff Current (V
Collector-Emitter Saturation Voltage (Note 2)
DC Current Gain (Note 2)
Transition Frequency (V
Output Capacitance (V
2SC4617
2SC4617G
2SC4617T1
2SC4617T1G
(I
(V
C
CE
= 60 mAdc, I
= 6.0 Vdc, I
B
C
= 5.0 mAdc)
= 1.0 mAdc)
CE
CB
(T
Device
J
= 12 Vdc, I
= 12 Vdc, I
= 25 C)
300 ms, D.C.
EB
CB
Characteristic
Characteristic
= 4.0 Vdc, I
E
= 30 Vdc, I
C
Rating
C
C
= 50 mAdc, I
= 2.0 mAdc, f = 30 MHz)
= 50 mAdc, I
C
= 0 Adc, f = 1 MHz)
(T
= 1.0 mAdc, I
2%.
A
= 25 C)
B
E
= 0)
= 0)
E
E
= 0)
= 0)
B
= 0)
http://onsemi.com
2SC4617
2
(Pb−Free)
(Pb−Free)
Package
SC−75
SC−75
SC−75
SC−75
V
V
V
V
V
V
Symbol
Symbol
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
T
h
CBO
EBO
P
T
I
f
stg
FE
OB
C
T
D
J
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
Min
120
−55 ~ + 150
5.0
50
50
−
−
−
−
−
Shipping
Value
Max
100
125
150
5.0
50
50
Typ
180
2.0
−
−
−
−
−
−
−
†
Max
560
0.5
0.5
0.4
−
−
−
−
−
mAdc
Unit
Unit
Vdc
Vdc
Vdc
mW
C
C
Unit
MHz
Vdc
Vdc
Vdc
Vdc
mA
mA
pF
−