MSD601-RT1G ON Semiconductor, MSD601-RT1G Datasheet - Page 3

• Manufacturer Part Number: MSD601-RT1G
• Description: TRANS GP NPN 100MA 50V SC59
• Manufacturer: ON Semiconductor

Specifications of MSD601-RT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 2mA, 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Dc Collector/base Gain Hfe Min: 210
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MSD601-RT1GOS; MSD601-RT1GOS; MSD601-RT1GOSTR

H
E
A1
2
D
e
3
1
b
*For additional information on our Pb−Free strategy and soldering
E
A
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.039
0.037
0.95
1.0
MSD601−RT1, MSD601−ST1
L
0.031
0.8
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
C
http://onsemi.com
CASE 318D−04
ISSUE G
SC−59
3
STYLE 1:
NOTES:
DIM
A1
H
A
b
D
E
PIN 1. EMITTER
c
e
L
E
1.
2.
0.037
0.95
Y14.5M, 1982.
2. BASE
3. COLLECTOR
DIMENSIONING AND TOLERANCING PER ANSI
CONTROLLING DIMENSION: MILLIMETER.
SCALE 10:1
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MIN
0.094
2.4
MILLIMETERS
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
inches
mm
MAX
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
MIN
INCHES
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
NOM
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
MAX