BC 858C E6433 Infineon Technologies, BC 858C E6433 Datasheet - Page 7
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BC 858C E6433
Manufacturer Part Number
BC 858C E6433
Description
TRANSISTOR PNP AF 30V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BC857CE6327.pdf
(14 pages)
Specifications of BC 858C E6433
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
330mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage Vceo Max
30 V
Continuous Collector Current
0.1 A
Power Dissipation
330 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BC858CE6433XT
SP000010654
SP000010654
Transition frequency f
V
Total power dissipation P
BC856-BC860
f
T
CE
MHz
mW
10
10
10
360
300
270
240
210
180
150
120
5
5
= 5 V
90
60
30
3
2
1
10
0
0
-1
15
30
5
45
10
0
60
T
75
= ƒ(I
5
90 105 120
tot
10
= ƒ(T
C
1
)
S
EHP00378
mA
Ι
)
C
T
°C
S
10
150
2
7
Collector-base capacitance C
Emitter-base capacitance C
Total power dissipation P
BC857BF, BC858BF
mW
pF
300
250
225
200
175
150
125
100
12
10
75
50
25
9
8
7
6
5
4
3
2
1
0
0
0
0
15
4
30
45
8
CEB
60
BC856...-BC860...
75
12
90 105 120 °C
tot
eb
= ƒ(T
16
cb
2008-04-29
= ƒ(V
= ƒ(V
S
V
)
V
T
EB
CB
S
CCB
CB
)
(V
150
22
)
EB
)