BC 858C E6327 Infineon Technologies, BC 858C E6327 Datasheet - Page 3
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BC 858C E6327
Manufacturer Part Number
BC 858C E6327
Description
TRANSISTOR PNP AF 30V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BC857CE6327.pdf
(14 pages)
Specifications of BC 858C E6327
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
330mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BC858CE6327XT
SP000010624
SP000010624
Maximum Ratings
Parameter
Collector-emitter voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Collector-base voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current, t
Total power dissipation
T
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC856-BC860
BC857BF-BC858BF
BC857BL3, BC858BL3
BC856W-BC860W
For calculation of R
S
S
S
S
≤ 71 °C, BC856-BC860
≤ 128 °C, BC857BF-BC858BF
≤ 135 °C, BC857BL3, BC860BL3
≤ 124 °C, BC856W-BC860W
thJA
please refer to Application Note Thermal Resistance
p
≤ 10 ms
1)
3
Symbol
V
V
V
I
I
P
T
T
Symbol
R
C
CM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
Value
BC856...-BC860...
Value
≤ 240
≤ 105
≤ 90
≤ 60
330
250
250
250
100
200
150
65
45
30
80
50
30
5
2008-04-29
Unit
V
mA
mW
°C
Unit
K/W