BC 858A E6327 Infineon Technologies, BC 858A E6327 Datasheet - Page 6

• Manufacturer Part Number: BC 858A E6327
• Description: TRANSISTOR PNP AF 30V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BC 858A E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 250 MHz
• Collector- Emitter Voltage Vceo Max: 30 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BC858AE6327XT; SP000010636

DC current gain h
V
h
Base-emitter saturation voltage
I
C
Ι
FE
CE
C
= ƒ(V
10
mA
10
10
10
10
10
10
10
5
5
5
= 1 V
5
5
-1
3
2
1
0
10
2
1
0
0
-2
100
BEsat
25
-50
C
C
C
0.2
5
), h
10
FE
-1
100 C
25
0.4
-50C
FE
= 20
C
C
5
= ƒ(I
10
0.6
0
C
)
0.8
5
10
1
EHP00382
Ι
V
EHP00379
mA
V
C
BEsat
10
1.2
2
6
Ι
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
CB0
C
C
CBO
10
10
= ƒ(V
mA
10
10
10
10
10
10
10
10
nA
5
5
-1
5
5
5
5
-1
1
0
0
2
1
4
3
2
= 30 V
0
0
CEsat
0.1
), h
FE
50
max
= 20
0.2
BC856...-BC860...
100
-50
25
CBO
0.3
C
C
C
100
= ƒ(T
2008-04-29
typ
0.4
EHP00380
EHP00381
C
T
V
A
A
CEsat
)
V
150
0.5