2SA1931(Q) Toshiba, 2SA1931(Q) Datasheet
2SA1931(Q)
Manufacturer Part Number
2SA1931(Q)
Description
TRANS PNP 50V 5A SC-67
Manufacturer
Toshiba
Datasheet
1.2SA1931Q.pdf
(4 pages)
Specifications of 2SA1931(Q)
Transistor Type
PNP
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1A, 1V
Power - Max
2W
Frequency - Transition
60MHz
Mounting Type
Through Hole
Package / Case
SC-67
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
5 A
Power Dissipation
2000 mW
Dc Collector/base Gain Hfe Min
100 @ 1A @ 1 V
Maximum Operating Frequency
60 MHz (Typ)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
High-Current Switching Applications
•
•
•
Absolute Maximum Ratings
Low saturation voltage: V
High-speed switching time: t
Complementary to 2SC4881
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristic
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
Ta = 25°C
Tc = 25°C
CE (sat)
stg
= 1.0 μs (typ.)
= −0.4 V (max)
(Tc = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
2SA1931
−55 to 150
Rating
−60
−50
150
2.0
−7
−5
−1
20
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10R1A
SC-67
2006-11-13
―
2SA1931
Unit: mm
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2SA1931(Q) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...
Page 2
Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Marking A1931 Part No. (or abbreviation ...
Page 3
I – −10 −100 Common emitter Tc = 25°C −8 −6 −4 − − −2 −4 −6 −8 Collector−emitter voltage – 500 Tc = 100°C ...
Page 4
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...