2SC2705-O(TE6,F,M) Toshiba, 2SC2705-O(TE6,F,M) Datasheet - Page 2

• Manufacturer Part Number: 2SC2705-O(TE6,F,M)
• Description: TRANS NPN 150V 50MA TO-92MOD
• Manufacturer: Toshiba

Specifications of 2SC2705-O(TE6,F,M)

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 150 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 800 mW
• Dc Collector/base Gain Hfe Min: 80
• Gain Bandwidth Product Ft: 200 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
1000
500
300
100
500
300
100
56
48
40
32
24
16
50
30
10
50
30
10
8
0
0.3
0.5
0
Common emitter
Ta = 25°C
2
1
Collector-emitter voltage V
1
Collector current I
Collector current I
4
−25
25
Ta = 100°C
3
I B = 0.1 mA
6
I
h
C
f
FE
3
T
0.5
– V
– I
8
– I
0
CE
C
10
0.3
0.2
0.4
C
V CE = 10 V
10
C
C
10
Common emitter
Ta = 25°C
(mA)
(mA)
Common emitter
V CE = 5 V
CE
12
30
5
(V)
14
30
100
16
50
2
0.05
0.03
0.01
0.5
0.3
0.1
0.5
0.3
48
32
16
30
10
0
1
5
3
1
0.3
0.5
0
Ta = 100°C
1
Collector-base voltage V
−25
Base-emitter voltage V
0.4
1
Collector current I
3
25
25
V
Ta = 100°C
C
CE (sat)
I
C
0.8
ob
3
– V
−25
– V
BE
10
CB
– I
C
C
1.2
BE
10
(mA)
CB
Common emitter
I C /I B = 10
Common emitter
V CE = 5 V
I E = 0
f = 1 MHz
Ta = 25°C
(V)
30
(V)
1.6
2004-07-07
30
2SC2705
100
50