2SB1240TV2R Rohm Semiconductor, 2SB1240TV2R Datasheet
2SB1240TV2R
Manufacturer Part Number
2SB1240TV2R
Description
TRANS DRIVER PNP 32V 2A ATV TB
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1182TLQ.pdf
(4 pages)
Specifications of 2SB1240TV2R
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
800mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 500mA, 3V
Power - Max
1W
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
ATV
Pnp
Transistor Polarity
Collector Emitter Voltage V(br)ceo
32V
Power Dissipation Pd
1W
Dc Collector Current
2A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
ATV
No. Of Pins
3
Svhc
No
Transistor Polarity
PNP
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1240TV2R
Manufacturer:
ROHM
Quantity:
68 000
Medium power transistor (32V, 2A)
Features
1) Low V
2) Complements 2SD1758 / 2SD1862.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
○
∗
c
www.rohm.com
∗
∗
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Measured using pulse current.
V
(I
1 Single pulse, Pw=100ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2SB1182 / 2SB1240
2010 ROHM Co., Ltd. All rights reserved.
C
CE(sat)
/I
B
= 2A / 0.2A)
CE(sat)
= 0.5V (Typ.)
Parameter
Parameter
.
2SB1240
2SB1182
Symbol
BV
BV
BV
V
Cob
I
I
Symbol
h
CBO
EBO
CE(sat)
f
V
V
V
FE
Tstg
CBO
CEO
EBO
T
P
Tj
CBO
CEO
EBO
I
C
C
Min.
−40
−32
120
−5
−
−
−
−
−
−55 to 150
2
Typ.
−0.5
100
50
or larger.
−
−
−
−
−
−
Limits
−40
−32
150
−5
−2
−3
10
1
Dimensions (Unit : mm)
Max.
−0.8
390
−1
−1
2SB1182
−
−
−
−
−
ROHM : CPT3
EIAJ : SC-63
0.75
1/3
2.3
±
0.9
(1)
0.2
MHz
6.5
5.1
Unit
W (Tc=25 °C )
μ A
μ A
pF
V
V
V
V
−
+0.2
−
(2)
±
A (Pulse)
0.1
0.2
2.3
A(DC)
(3)
Unit
±
°C
°C
W
0.2
V
V
V
0.65
I
I
I
V
V
I
V
V
V
C
C
E
C
±
C0.5
CB
EB
CE
CE
CB
= −50 μ A
= −50 μ A
= −1mA
/I
0.1
B
= −20V
= −4V
= −3V, I
= −5V, I
= −10V, I
= −2A/ −0.2A
∗
∗
1
2
(1) Base
(2) Collector
(3) Emitter
0.5
0.55
1.0
2.3
Conditions
C
E
+0.2
±
±
−
= −0.5A
=0.5A, f=100MHz
0.1
0.1
0.2
±
E
0.1
=0A, f=1MHz
2SB1240
0.65Max.
ROHM : ATV
(1)
∗
∗
2.54 2.54
6.8
(2)
±
0.2
(3)
2010.04 - Rev.C
0.5
±
0.1
1.05
(1) Emitter
(2) Collector
(3) Base
2.5
±
0.2
0.45
±
0.1
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2SB1240TV2R Summary of contents
Page 1
Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low V . CE(sat) = 0.5V (Typ.) V CE(sat) = 2A / 0.2A Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Absolute ...
Page 2
FE Package Code Type h Basic ordering unit (pieces) FE 2SB1182 QR 2SB1240 QR h values are classified as follows : FE Item 120 to 270 180 to 390 FE ...
Page 3
I . (Pulse) P =500μs C Max W −2 DC −1 −0.5 P =1ms W P =100ms W −0.2 −0.1 −0.05 Ta=25°C ∗Single −0.02 nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...