BSP61,115 NXP Semiconductors, BSP61,115 Datasheet - Page 7

• Manufacturer Part Number: BSP61,115
• Description: TRANS PNP 80V 500MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP61,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP - Darlington
• Current - Collector Cutoff (max): 50nA
• Frequency - Transition: 200MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 1 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933986360115::BSP61 T/R::BSP61 T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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613514/05/pp7
Date of release: 2001 May 31
Document order number: 9397 750 07906