BSP51,115 NXP Semiconductors, BSP51,115 Datasheet - Page 3

• Manufacturer Part Number: BSP51,115
• Description: TRANS NPN 80V 1000MA SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSP51,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.25W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Maximum Collector Cut-off Current: 0.05 uA
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933986340115; BSP51 T/R; BSP51 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 23
R
R
I
I
h
V
V
f
Switching times (between 10% and 90% levels); see Fig.3
t
t
j
CES
EBO
T
on
off
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN Darlington transistors
th j-a
th j-s
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
thermal resistance from junction to ambient
thermal resistance from junction to solder point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
transition frequency
turn-on time
turn-off time
p
BSP50
BSP51
BSP52
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
V
V
V
I
V
I
I
T
I
I
I
I
C
C
C
C
C
Con
Boff
j
BE
BE
BE
CE
I
I
= 150 °C
= 0; V
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; V
C
C
= −0.5 mA
= 0; V
= 0; V
= 0; V
= 500 mA; I
= 10 V; note 1; see Fig.2
= 150 mA
= 500 mA
EB
CE
CE
CE
= 4 V
CONDITIONS
3
= 45 V
= 60 V
= 80 V
B
B
B
CE
= 0.5 mA
= 0.5 mA;
= 0.5 mA
Bon
= 5 V; f = 100 MHz −
note 1
= 0.5 mA;
CONDITIONS
BSP50; BSP51; BSP52
−
−
−
−
1 000
2 000
−
−
−
−
−
MIN.
VALUE
96
17
−
−
−
−
−
−
−
−
−
200
500
1 300
TYP.
Product data sheet
50
50
50
50
−
−
1.3
1.3
1.9
−
−
−
MAX.
UNIT
K/W
K/W
2
.
nA
nA
nA
nA
V
V
V
MHz
ns
ns
UNIT