2SCR553PT100 Rohm Semiconductor, 2SCR553PT100 Datasheet

no-image

2SCR553PT100

Manufacturer Part Number
2SCR553PT100
Description
TRANSISTOR NPN 50V 2A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SCR553PT100

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
350mV @ 35mA, 700mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 50mA, 2V
Power - Max
2W
Frequency - Transition
360MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SCR553PT100TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SCR553PT100
Manufacturer:
Rohm Semiconductor
Quantity:
1 859
Midium Power Transistors (50V / 2A)
NPN Silicon epitaxial planar transistor
1) Low saturation voltage, typically
2) High speed switching
Driver
2SCR553P
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
c
www.rohm.com
 Structure
 Features
 Applications
 Packaging specifications
 Absolute maximum ratings (Ta = 25C)
2SCR553P
2009 ROHM Co., Ltd. All rights reserved.
Type
V
CE (sat)
= 0.13V (Max.) (I
Package
Code
Basic ordering unit (pieces)
Parameter
DC
Pulsed
C
/ I
B
= 700mA / 35mA)
Symbol
Taping
T100
1000
V
V
V
T
I
P
P
CBO
CEO
EBO
I
T
CP
stg
C
D
D
j
*1
*2
*3
-55 to 150
Limits
150
0.5
50
50
6
2
4
2
1/4
Unit
C
C
W
W
V
V
V
A
A
 Dimensions (Unit : mm)
 Inner circuit (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
(1)
Abbreviated symbol : NG
(1)
(2)
(3)
(2)
(3)
2009.12 - Rev.A

Related parts for 2SCR553PT100

2SCR553PT100 Summary of contents

Page 1

Midium Power Transistors (50V / 2A) 2SCR553P  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically V = 0.13V (Max 700mA / 35mA) CE (sat High speed switching ...

Page 2

Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 ...

Page 3

Ta=25°C 0.00 0 0.5 1 1.5 COLECTOR TO EMITTER VOLTAGE : V CE Fig.1 Typical Output Characteristics 1 ...

Page 4

BASE CURENT WAVEFORM COLLECTOR CURRENT WAVEFORM www.rohm.com ○ 2009 ROHM Co., Ltd. All rights reserved 50μs DUTY CYCLE stg f ...

Page 5

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

Related keywords