2SC5824T100Q Rohm Semiconductor, 2SC5824T100Q Datasheet

2SC5824T100Q

Manufacturer Part Number

2SC5824T100Q

Description

TRANSISTOR NPN 60V 3A SOT-89

Manufacturer

Rohm Semiconductor

Datasheet

1.2SC5824T100R.pdf (4 pages)

Specifications of 2SC5824T100Q

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

500mV @ 200mA, 2A

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 100mA, 2V

Power - Max

Frequency - Transition

200MHz

Mounting Type

Surface Mount

Package / Case

SC-62, SOT-89, TO-243 (3 Leads + Tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Other names

2SC5824T100Q
2SC5824T100QTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

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Part Number:

2SC5824T100Q

Manufacturer:

ROHM

Quantity:

24 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

2SC5824T100Q

Manufacturer:

ROHM/罗姆

Quantity:

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Company:

H&T Electronics

Part Number:

2SC5824T100Q

Quantity:

9 000

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Power transistor (60V, 3A)

Features

1) High speed switching. (Tf : Typ. : 30ns at I

2) Low saturation voltage, typically

3) Strong discharge power for inductive load and

4) Complements the 2SA2071.

Applications

Low frequency amplifier

High speed switching

Structure

NPN Silicon epitaxial planar transistor

Packaging specifications

Absolute maximum ratings (Ta=25C)

∗ 1 Pw=100ms

∗ 2 Each terminal mounted on a recommended land.

∗ 3 Mounted on a 40x40x0.7(mm) ceramic substrate

○

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

Type

2SC5824

www.rohm.com

(Typ. : 200mV at I

capacitance load.

2SC5824

Parameter

Package

Code

Basic ordering unit

(pieces)

= 2A, I

= 200mA)

Taping

T100

1000

Symbol

Tstg

CBO

CEO

EBO

= 3A)

−55 to +150

Limits

500

150

2.0

1/3

Unit

°C

Dimensions (Unit : mm)

(1)Base(Gate)

(2)Collector(Drain)

(3)Emitter(Sourse)

MPT3

∗ 1

∗ 2

∗ 3

Abbreviated symbol : UP

Each lead has same dimensions

2011.03 - Rev.C

Related parts for 2SC5824T100Q

2SC5824T100Q Summary of contents

Page 1

Power transistor (60V, 3A) 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns Low saturation voltage, typically (Typ. : 200mV 2A 200mA Strong discharge power for inductive ...

Parameter Symbol BV Collector−base breakdown voltage CBO Collector−emitter breakdown voltage BV CEO BV Emitter−base breakdown voltage EBO Collector cut-off current I CBO Emitter cut-off current I EBO Collector−emitter staturation voltage V CE(sat) DC current gain h ...

Page 3

Ta=25°C =10V V CE 100 10 1 −0.001 −0.01 −0.1 −1 −10 EMITTER CURRENT : Fig.7 Transition frequency Switching characteristics measurement circuits V www.rohm.com ○ 2011 ROHM Co., Ltd. All rights reserved. c 100 ...

Page 4

ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...

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2SC5824T100Q Rohm Semiconductor, 2SC5824T100Q Datasheet

2SC5824T100Q

Specifications of 2SC5824T100Q

Available stocks

Related parts for 2SC5824T100Q

2SC5824T100Q Summary of contents

Page 1

Page 2

Page 3

Page 4

Related keywords