2SD1766T100P Rohm Semiconductor, 2SD1766T100P Datasheet
2SD1766T100P
Manufacturer Part Number
2SD1766T100P
Description
TRANS DVR NPN 32V 2A SOT-89 TR
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD1766T100Q.pdf
(4 pages)
Specifications of 2SD1766T100P
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
800mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
82 @ 500mA, 3V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Medium power transistor (32V, 2A)
Features
1) Low V
2) Complements the 2SB1188 / 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Absolute maximum ratings (Ta=25C)
∗1 Single pulse, P
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
○
c
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
V
(I
2SD1766 / 2SD1758 / 2SD1862
2009 ROHM Co., Ltd. All rights reserved.
CE(sat)
C
/I
B
= 2A / 0.2A)
CE(sat)
= 0.5V (Typ.)
W
Parameter
=20ms
.
2SD1766
2SD1758
2SD1862
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
2
or lager.
−55~+150
Limits
150
2.5
0.5
40
32
10
5
2
2 ∗2
1 ∗3
∗1
W (T
A (Pulse)
A (DC)
∗ Denotes h
Unit
C
Dimensions (Unit : mm)
°C
°C
W
W
1/3
=25°C)
V
V
V
2SD1766
2SD1862
0.65Max.
ROHM : MPT3
EIAJ : SC-62
ROHM : ATV
(1)
1.5 ± 0.1
0.4 ± 0.1
FE
Abbreviated symbol : DB∗
2.54 2.54
6.8 ± 0.2
(2)
(1)
(3)
1.6 ± 0.1
3.0 ± 0.2
4.5
(2)
0.5 ± 0.1
+ 0.2
− 0.1
0.5 ± 0.1
(3)
0.4 ± 0.1
1.5 ± 0.1
1.05
(1) Emitter
(2) Collector
(3) Base
1.5
(1) Base
(2) Collector
(3) Emitter
2.5 ± 0.2
+ 0.2
− 0.1
0.45 ± 0.1
0.4
+ 0.1
− 0.05
2SD1758
ROHM : CPT3
EIAJ : SC-63
0.75
2.3±0.2
0.9
(1)
6.5±0.2
5.1
+0.2
−0.1
(2)
2.3±0.2
2009.12 - Rev.B
(3)
0.65±0.1
C0.5
(1) Base
(2) Collector
(3) Emitter
0.5±0.1
0.55±0.1
2.3
1.0±0.2
+0.2
−0.1
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2SD1766T100P Summary of contents
Page 1
Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features 1) Low V . CE(sat 0.5V (Typ.) CE(sat 0.2A Complements the 2SB1188 / 2SB1182 / 2SB1240 Structure Epitaxial planar ...
Page 2
Parameter Symbol Collector-base breakdown voltage BV Collector-emitter breakdown voltage BV Emitter-base breakdown voltage BV Collector cutoff current I CBO Emitter cutoff current I EBO DC current transfer ratio h FE Collector-emitter saturation ...
Page 3
Ta=25° 1MHz =0A 500 Cib 200 100 Cob 0 COLLECTOR TO BASE VOLTAGE : V (V) CB EMITTER TO ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...