BC848BWT106 Rohm Semiconductor, BC848BWT106 Datasheet

TRANS NPN 30V 1MA SOT-323 TR

BC848BWT106

Manufacturer Part Number
BC848BWT106
Description
TRANS NPN 30V 1MA SOT-323 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of BC848BWT106

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC848BWT106
Manufacturer:
SAMSUNG
Quantity:
3 123
Transistors
NPN General Purpose Transistor
BC848BW / BC848B
1) BV
2) Complements the BC858B / BC858BW.
∗ When mounted on a 7×5×0.6mm ceramic board.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Features
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
CEO
Parameter
minimum is 30V (I
Parameter
BC848BW
BC848B
Symbol
C
V
V
V
Tstg
=1mA)
P
Tj
CBO
CEO
EBO
I
C
C
Symbol
−65~+150
V
BV
BV
BV
V
Cob
I
Limits
CE(sat)
Cib
BE(on)
h
CBO
0.35
150
f
0.1
0.2
0.2
FE
30
30
CBO
CEO
EBO
T
5
Min.
0.58
200
30
30
5
Unit
°C
°C
W
W
W
V
V
V
A
Typ.
200
3
8
Max.
0.25
0.77
100
450
0.6
5
External dimensions (Unit : mm)
BC848BW
ROHM : UMT3
EIAJ : SC-70
BC848B, BC848C
ROHM : SST3
MHz
Unit
nA
µA
pF
pF
V
V
V
V
V
V
V
V
I
I
I
V
V
I
I
V
V
C
C
E
C
C
CB
CB
CE
CE
CE
CB
EB
=50µA
=50µA
=1mA
/I
/I
B
B
=5V, I
=10V, I
=0.5V, I
=30V
=30V, Ta=150°C
/I
/I
=10mA/0.5mA
=100mA/5mA
C
C
=5V/10mA
=5V/2mA
(1)
(1)
BC848BW / BC848B
0.65 0.65
0.95 0.95
2.0±0.2
1.3±0.1
(3)
All terminals have same dimensions
2.9±0.2
1.9±0.2
E
All terminals have same dimensions
=−20mA, f=100MHz
E
E
(2)
=0, f=1MHz
(2)
=0, f=1MHz
Conditions
0.3
(3)
0.4
+0.1
−0
+0.1
−0.05
0.15
0.15±0.05
0.2
Rev.A
+0.1
−0.06
0.95
0.9±0.1
(SPEC-C22)
0.45±0.1
0.7±0.1
+0.2
−0.1
0~0.1
0.2Min.
0~0.1
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
1/5

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BC848BWT106 Summary of contents

Page 1

Transistors NPN General Purpose Transistor BC848BW / BC848B Features =1mA minimum is 30V (I CEO C 2) Complements the BC858B / BC858BW. Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage ...

Page 2

Transistors Packaging specifications Part No. BC848BW Packaging type UMT3 Marking G1K Code T106 Basic ordering unit (pieces) 3000 Electrical characteristic curves 100 Ta=25° 0.1 20 =0mA 2.0 1.0 −COLLECTOR-EMITTER VOLTAGE ( ...

Page 3

Transistors 1000 100 10 0.01 0 -COLLECTOR CURRENT (mA) C Fig.5 AC current gain vs. collector current 0.18 Ta=25° 0.12 0.08 0.04 0 0.1 1.0 10 100 I -COLLECTOR CURRENT (mA) C ...

Page 4

Transistors 1000 Ta=25°C =40V V CC =101 =101 100 10 1.0 10 100 I -COLLECTOR CURRENT (mA) C Fig.12 Fall time vs. collector current 1000 Ta=25°C = 100 10 0.5 1.0 10 100 500 ...

Page 5

Transistors 100k Ta=25°C = f=30Hz 10k 1k 100 0.01 0 -COLLECTOR CURRENT (mA) C Fig.20 Noise characteristics ( ) 100k Ta=25°C = f=1kHz 10k 1k 100 0.01 0 -COLLECTOR CURRENT ...

Page 6

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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