BCX53-10,115 NXP Semiconductors, BCX53-10,115 Datasheet - Page 4

• Manufacturer Part Number: BCX53-10,115
• Description: TRANSISTOR PNP 80V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX53-10,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 63
• Frequency (max): 145MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933663060115::BCX53-10 T/R::BCX53-10 T/R

NXP Semiconductors
5. Limiting values
BC640_BCP53_BCX53_8
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
BC640
BCP53
BCX53
Rev. 08 — 22 February 2008
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
BC640; BCP53; BCX53
p
p
amb
1 ms
1 ms
80 V, 1 A PNP medium power transistors
25 C
[1]
[1]
[2]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2008. All rights reserved.
Max
0.83
0.65
1
0.5
0.9
1.3
150
+150
+150
100
80
5
1
1.5
0.2
Unit
V
V
V
A
A
A
W
W
W
W
W
W
C
C
C
2
2
.
.
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