BCX51-10,115 NXP Semiconductors, BCX51-10,115 Datasheet - Page 13

• Manufacturer Part Number: BCX51-10,115
• Description: TRANSISTOR PNP 45V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX51-10,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Collector/base Gain Hfe Min: 63 at 150 mA at 2 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933663040115::BCX51-10 T/R::BCX51-10 T/R

NXP Semiconductors
10. Revision history
Table 10.
BC636_BCP51_BCX51_8
Product data sheet
Document ID
BC636_BCP51_BCX51_8
Modifications:
BC636_BCP51_BCX51_7
BC636_BCP51_BCX51_6
BC636_638_640_5
BCP51_52_53_5
BCX51_52_53_4
Revision history
Release date
20080222
20070629
20060329
20041011
20030206
20011010
•
Figure
11: amended
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
Rev. 08 — 22 February 2008
BC636; BCP51; BCX51
Change notice
-
-
-
-
-
-
45 V, 1 A PNP medium power transistors
Supersedes
BC636_BCP51_BCX51_7
BC636_BCP51_BCX51_6
BC636_638_640_5
BCP51_52_53_5
BCX51_52_53_4
BC636_638_640_4
BCP51_52_53_4
BCX51_52_53_3
© NXP B.V. 2008. All rights reserved.
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