BCP51-16,135 NXP Semiconductors, BCP51-16,135 Datasheet - Page 4

• Manufacturer Part Number: BCP51-16,135
• Description: TRANSISTOR PNP 45V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP51-16,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 145MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1000 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933917290135; BCP51-16 /T3; BCP51-16 /T3

NXP Semiconductors
5. Limiting values
BC636_BCP51_BCX51_8
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
BC636
BCP51
BCX51
Rev. 08 — 22 February 2008
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
BC636; BCP51; BCX51
p
p
amb
1 ms
1 ms
45 V, 1 A PNP medium power transistors
25 C
[1]
[1]
[2]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2008. All rights reserved.
Max
0.83
0.65
1
0.5
0.9
1.3
150
+150
+150
45
45
5
1
1.5
0.2
Unit
V
V
V
A
A
A
W
W
W
W
W
W
C
C
C
2
2
.
.
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