BCX19,235 NXP Semiconductors, BCX19,235 Datasheet - Page 3

• Manufacturer Part Number: BCX19,235
• Description: TRANSISTOR NPN 45V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCX19,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 620mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933209640235; BCX19 /T3; BCX19 /T3

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Notes
1. Pulse test: t
2. V
2004 Jan 16
R
I
I
h
V
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BE
NPN general purpose transistor
th(j-a)
c
BE
decreases by approximately −2 mV/°C with increasing temperature.
thermal resistance from junction to ambient note 1
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
E
E
C
C
C
E
C
CE
I
I
I
= 0; V
= 0; V
= 0; V
= 500 mA; I
= 500 mA; V
= I
= 10 mA; V
C
C
C
= 1 V; note 1
= 100 mA
= 300 mA
= 500 mA
e
= 0; V
CB
CB
EB
= 20 V
= 20 V; T
= 5 V
CB
CONDITIONS
CE
3
B
CE
= 10 V; f = 1 MHz
= 50 mA; note 2
= 5 V; f = 100 MHz
= 1 V; notes 1 and 2
j
CONDITIONS
= 150 °C
−
−
−
100
70
40
−
−
−
100
MIN.
VALUE
500
−
−
−
−
−
−
−
−
5
−
TYP.
Product data sheet
100
5
100
600
−
−
620
1.2
−
−
MAX.
BCX19
UNIT
K/W
nA
μA
nA
mV
V
pF
MHz
UNIT