BCW89,215 NXP Semiconductors, BCW89,215 Datasheet - Page 4

• Manufacturer Part Number: BCW89,215
• Description: TRANSISTOR PNP 60V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCW89,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933495320215; BCW89 T/R; BCW89 T/R

NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 15
Plastic surface mounted package; 3 leads
PNP general purpose transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
4
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
Product data sheet
X
v
ISSUE DATE
M
BCW89
97-02-28
99-09-13
A
SOT23