SMBJ11CA R4 Taiwan Semiconductor, SMBJ11CA R4 Datasheet - Page 2
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SMBJ11CA R4
Manufacturer Part Number
SMBJ11CA R4
Description
TVS Diodes - Transient Voltage Suppressors 11V 600W 5% Bidir
Manufacturer
Taiwan Semiconductor
Datasheet
1.SMBJ58A_R4.pdf
(5 pages)
Specifications of SMBJ11CA R4
Polarity
Unidirectional
Channels
1 Channel
Clamping Voltage
18.2 V
Operating Voltage
11 V
Breakdown Voltage
12.2 V
Peak Surge Current
100 A
Peak Pulse Power Dissipation
600 W (Min)
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
3.73(Max) mm W x 4.75(Max) mm L
Package / Case
DO-214AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R4 SMBJ11CA
1000
6000
100
100
150
100
0.1
10
10
50
0
1
0.1 s
0
1
FIG.5- TYPICAL JUNCTION CAPACITANCE
FIG.1- PEAK PULSE POWER RATING CURVE
FIG.3-
0.2" sq 5.0mm COPPER PAD AREAS
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
VWM, REVERSE STAND-OFF VOLTAGE. (V)
2
VR-RATED
STAND-OFF
VOLTAGE
td
0
CLAMPING POWER
1.0 s
2
tr=10 sec.
PEAK VALUE
lppm
1.0
10
RATINGS AND CHARACTERISTIC CURVES (SMBJ SERIES)
td. PULSE WIDTH, sec.
t, TIME, ms
10 s
PULSE WIDTH (td) is DEFINED
AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
20
HALF VALUE- lpp
2.0
PULSE WAVEFORM
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
100 s
VR=0
100
2
200
3.0
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T =25 C
A
1.0ms
0
10ms
4.0
200
100
100
10
75
50
25
0
0
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
1
FIG.2- PULSE DERATING CURVE
SURGE CURRENT
25
50
NUMBER OF CYCLES AT 60Hz
TA, AMBIENT TEMPERATURE. C
75
8.3ms Single Half Sine Wave
JEDEC Method
UNIDIRECTIONAL ONLY
100
10
125
O
Version:B08
150
175
200
100