BTA212-600E NXP Semiconductors, BTA212-600E Datasheet - Page 3

• Manufacturer Part Number: BTA212-600E
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA212-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 25 mA
• Forward Voltage Drop: 1.6 V
• Mounting Style: SMD/SMT
• Package / Case: TO-220AB
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA212-600E,127

Philips Semiconductors
June 2003
Three quadrant triacs
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
20
15
10
5
0
100
1000
on-state current I
80
60
40
20
100
0
Ptot / W
0
10
10us
1
ITSM / A
ITSM / A
dI /dt limit
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T
100us
1
T(RMS)
5
TSM
Number of cycles at 50Hz
10
TSM
IT(RMS) / A
, versus number of cycles, for
, where
, versus pulse width t
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
10
p
= conduction angle.
100
20ms.
10ms
T
T
Tmb(max) / C
120
90
60
30
tot
= 180
, versus rms
I TSM
I TSM
time
time
p
100ms
, for
15
1000
95
102.5
110
117.5
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
15
10
Fig.4. Maximum permissible rms current I
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
5
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
BTA212 series D, E and F
0.1
surge duration / s
BT138
Tj / C
Tmb / C
50
50
mb
Product specification
1
100
99˚C.
100
99 C
mb
Rev 3.000
T(RMS)
.
150
10
150
,
j
.