MMBT2907A-7 Diodes Inc, MMBT2907A-7 Datasheet - Page 2

• Manufacturer Part Number: MMBT2907A-7
• Description: TRANS PNP 60V 300MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT2907A-7

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT2907ADITR; MMBT2907ATR; MMBT2907ATR

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
MMBT2907A
Document number: DS30040 Rev. 12 - 2
250
150
400
350
300
200
100
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
4. Short duration pulse test used to minimize self-heating effect.
50
0
0
R
θJA
25
T , AMBIENT TEMPERATURE (°C)
= 417 C/W
A
Characteristic
°
50
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
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V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
C
h
CBO
CEX
I
t
t
f
t
BL
obo
off
t
off
t
FE
t
ibo
T
d
s
r
f
2 of 4
Min
-5.0
100
100
100
200
-60
-60
1,000
75
50
⎯
⎯
⎯
⎯
⎯
⎯
—
⎯
⎯
⎯
⎯
⎯
⎯
100
10
1
-1
Fig. 2 Typical DC Current Gain vs. Collector Current
V
Max
-0.4
-1.6
-1.3
-2.6
300
100
CE
-10
-50
-50
8.0
30
45
10
40
80
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= -5V
I , COLLECTOR CURRENT (mA)
C
MHz
Unit
nA
μA
nA
nA
pF
pF
⎯
ns
ns
ns
ns
ns
ns
V
V
V
V
V
-10
T = 25°C
A
I
I
I
V
V
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 100MHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
B1
CB
CB
CE
CE
CB
EB
CE
CC
CC
T = 150°C
= -10μA, I
= -150mA, I
= -10μA, I
= -10mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -500mA, I
= 150mA, I
= 500mA, I
= -15mA
A
= I
= -30V, V
= -30V, V
= -50V, I
= -50V, I
= -10V, f = 1.0MHz, I
= -2.0V, f = 1.0MHz, I
= -20V, I
= -30V, I
= -6.0V, I
B2
= -15mA
-100
Test Condition
E
C
B
E
E
C
C
T = -50°C
B
B
C
EB(OFF)
EB(OFF)
= 0
= 0
B
A
B
CE
= 0
= 0
= 0, T
= -50mA,
= -150mA,
CE
CE
CE
CE
= 15mA
= 50mA
= -150mA,
= -15mA
= -50mA
= -10V
MMBT2907A
= -10V
= -10V
= -10V
= -10V
A
= -0.5V
= -0.5V
= 125°C
© Diodes Incorporated
September 2008
E
C
= 0
-1,000
= 0