BC182L Fairchild Semiconductor, BC182L Datasheet
BC182L
Manufacturer Part Number
BC182L
Description
TRANSISTOR NPN 50V 100MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BC182L.pdf
(3 pages)
Specifications of BC182L
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
350 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
80
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
• Sourced from process 10.
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
V
Dynamic Characteristics
f
C
h
NF
P
R
R
C
Symbol
CBO
EBO
T
collector currents to 100mA.
FE
fe
J,
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
BE
D
ob
Symbol
JA
JC
T
Symbol
(sat)
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Leakage Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
Total Device Dissipation @T
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Storage Junction Temperature Range
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
A
T
=25 C
Parameter
C
- Continuous
=25 C unless otherwise noted
Parameter
BC182L
I
I
V
I
I
V
V
V
V
V
I
I
V
V
V
V
R
C
C
E
C
C
C
CB
EB
CE
CE
CE
CE
CE
CE
CE
CE
S
= 10 A, I
= 10mA, I
= 2mA, I
= 100 A, I
= 100mA, I
= 100mA, I
= 2K , f = 1KHz, BW = 200Hz
= 4V, I
= 50V, V
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 5V, I
= 5V, I
Test Condition
E
B
C
C
C
C
C
C
C
E
B
C
= 0
= 0
C
= 10 A
= 2mA
= 100mA
= 2mA
= 10mA, f = 100MHz
= 2mA, f = 1KHz
= 0.2mA
BE
= 0
B
B
= 0.5mA
= 0, f = 1MHz
= 0
= 5mA
= 5mA
= 0
1. Emitter 2. Collector 3. Base
1
0.55
Min.
- 55 ~ 150
120
150
240
50
60
40
80
6
Value
100
50
60
6
Max.
350
357
125
2.8
Typ.
TO-92
Max.
0.25
500
500
0.6
1.2
0.7
15
10
15
5
Rev. A, October 2002
mW/ C
mW/ C
Units
mW
C/W
Units
mA
V
V
V
C
Units
MHz
nA
nA
dB
pF
V
V
V
V
V
V
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BC182L Summary of contents
Page 1
... Small Signal Current Gain fe NF Noise Figure Thermal Characteristics Symbol P Total Device Dissipation @T D Derate above Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2002 Fairchild Semiconductor Corporation BC182L T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition I = 2mA ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, October 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...