BC858AW-7-F Diodes Inc, BC858AW-7-F Datasheet - Page 2

• Manufacturer Part Number: BC858AW-7-F
• Description: TRANS BIPO PNP SGL 200MW SC70-3
• Manufacturer: Diodes Inc

Specifications of BC858AW-7-F

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Electrical Characteristics
Collector-Base Breakdown Voltage (Note 6)
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage (Note 6)
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Voltage (Note 6)
Collector-Cutoff Current (Note 6)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
DS30251 Rev. 8 - 2
100
250
200
150
50
6. Short duration pulse test used to minimize self-heating effect.
0
0
25
T , AMBIENT TEMPERATURE (°C)
Characteristic
A
Fig. 1, Max Power Dissipation vs.
50
Ambient Temperature
Current Gain Group
75
100 125
@T
A
= 25°C unless otherwise specified
150
BC856
BC856
BC857
BC858
BC857
BC858
175
A
B
C
V
V
V
200
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
C
BE(SAT)
BE(ON)
I
I
h
CBO
CBO
NF
CBO
www.diodes.com
f
FE
T
2 of 3
-600
Min
125
220
420
100
-80
-50
-30
-65
-45
-30
—
—
—
—
—
—
—
—
-5
-250
-700
-850
-650
Typ
180
290
520
200
-75
0.5
0.4
0.3
0.2
—
—
—
—
—
—
—
—
—
—
—
0.1
3
0
0.1
I
I
Fig. 2 Collector Emitter Saturation Voltage
C
B
Max
-300
-650
-950
-750
-820
250
475
800
-4.0
-15
4.5
10
= 10
—
—
—
—
—
—
—
—
—
I , COLLECTOR CURRENT (mA)
C
1
T = 150°C
A
MHz
Unit
mV
mV
mV
nA
µA
dB
vs. Collector Current
pF
—
V
V
V
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
V
R
Δf = 200Hz
C
C
E
C
C
C
C
T = 25°C
CE
CE
CE
CB
CB
CE
CB
CE
S
= 1μA, I
10
= 10μA, I
= 10mA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
A
= 2kΩ, f = 1kHz,
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
= -5.0V, I
C
Test Condition
B
= 0
B
B
B
= 0
C
C
C
C
C
A
= 0
B
B
BC856AW - BC858CW
100
= -0.5mA
= -0.5mA
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA,
= 200µA,
= -5.0mA
= -5.0mA
T = -50°C
A
© Diodes Incorporated
1,000