UPC2711T-E3 CEL, UPC2711T-E3 Datasheet

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UPC2711T-E3

Manufacturer Part Number
UPC2711T-E3
Description
RF Amplifier
Manufacturer
CEL
Datasheet

Specifications of UPC2711T-E3

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPC2711T-E3
Manufacturer:
NEC
Quantity:
5 321
Part Number:
UPC2711T-E3
Manufacturer:
NEC
Quantity:
3 000
Part Number:
UPC2711T-E3
Manufacturer:
ITT
Quantity:
515
Part Number:
UPC2711T-E3
Manufacturer:
NEC
Quantity:
8 000
Part Number:
UPC2711T-E3
Manufacturer:
NEC
Quantity:
20 000
Part Number:
UPC2711T-E3-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
FEATURES
• WIDE FREQUENCY RESPONSE: 3 GHz
• HIGH GAIN: 15 dB (UPC2708T)
• SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2708T and UPC2711T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
SYMBOLS
CHANGE OVER TEMPERATURE
RL
ISOL
P
P
RL
R
I
G
NF
CC
f
SAT
G
1dB
G
U
OUT
TH
S
IN
S
T
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
Gain Flatness, f = 0.1 - 2.6 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
PARAMETERS AND CONDITIONS
U
is 3 dB down from the gain at 0.1 GHz)
f = 0.1 - 2.5 GHz
PACKAGE OUTLINE
PART NUMBER
WIDE-BAND AMPLIFIER
(T
A
3 GHz SILICON MMIC
= 25 C, f = 1 GHz, V
UNITS
dB/ C
GHz
dBm
dBm
CC
C/W
mA
dB
dB
dB
dB
dB
dB
= 5 V)
20
15
10
5
0
California Eastern Laboratories
MIN
2.7
7.5
13
18
20
16
0
8
UPC2708
UPC2711
UPC2708T
0.5
GAIN vs. FREQUENCY
+0.002
TYP
T06
2.9
7.5
6.5
26
15
10
11
20
23
0.8
Frequency, f (GHz)
1.0
MAX
18.5
200
33
1.5
8
UPC2708T
UPC2711T
2.0
MIN
2.7
11
20
25
-2
9
9
UPC2711T
2.5
-0.002
TYP
T06
2.9
12
13
25
12
30
-4
0.8
1
5
3.0
MAX
16.5
200
6.5
15

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UPC2711T-E3 Summary of contents

Page 1

... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic inte- grated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/ measurement equipment ...

Page 2

... UPC2708T, UPC2711T ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC P Input Power Power Dissipation T T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted 1.6 mm epoxy glass PWB (T TYPICAL PERFORMANCE CURVES CIRCUIT CURRENT vs. VOLTAGE ...

Page 3

... V CC -10 RL out - -30 -40 0.1 0.3 1.0 Frequency, f (GHz) UPC2711T ISOLATION vs. FREQUENCY 5 -10 -20 -30 -40 -50 0.1 0.3 1.0 Frequency, f (GHz) UPC2711T POWER vs. FREQUENCY 5 SAT 1dB -10 -15 0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency, f (GHz) X: Typical SSB Third Order intercept Point 3.0 3 ...

Page 4

... UPC2708T, UPC2711T TYPICAL PERFORMANCE CURVES UPC2708T OUTPUT POWER vs. INPUT POWER AND TEMPERATURE 1 5 -10 -15 -20 -30 -25 -20 -15 -10 Input Power, P (dBm) IN UPC2708T OUTPUT POWER vs. INPUT POWER AND VOLTAGE 1 5 -10 -15 -20 -30 -25 -20 -15 -10 Input Power NOISE FIGURE vs. FREQUENCY UPC2708T 6 UPC2711T 0.5 1.0 1 ...

Page 5

... UPC2711T FREQUENCY S 11 GHz MAG ANG 0.10 0.115 -13.9 0.20 0.110 -22.1 0.30 0.104 -31.2 0.40 0.096 -41.7 ...

Page 6

... Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER UPC2708T-E3 UPC2711T-E3 *Embossed Tape wide. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA · CALIFORNIA EASTERN LABORATORIES, INC DATA SUBJECT TO CHANGE WITHOUT NOTICE ...

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