MAX9981ETX+D Maxim Integrated Products, MAX9981ETX+D Datasheet - Page 2

• Manufacturer Part Number: MAX9981ETX+D
• Description: RF Mixer IC MIXER DUAL SIGE al SiGe High-Lineari
• Manufacturer: Maxim Integrated Products

Specifications of MAX9981ETX+D

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
V
IFMAIN+, IFMAIN-, IFDIV+, IFDIV-,
TAPMAIN, TAPDIV ..............................................................+5.5V
MAINBIAS, DIVBIAS Current ................................................5mA
RFMAIN, RFDIV, LO1, LO2 Input Power ........................+20dBm
825MHz to 915MHz, Dual SiGe High-Linearity
Active Mixer
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
267Ω resistors connected from MAINBIAS and DIVBIAS to GND, T
V
AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
T
f
2
Supply Voltage
Supply Current
Input High Voltage
Input Low Voltage
LOSEL Input Current
LO
RF Frequency
LO Frequency
IF Frequency
LO Drive Level
Conversion Gain (Note 3)
Gain Variation from Nominal
Conversion Loss from LO to IF
Noise Figure
CC
A
CC
MAINBIAS, DIVBIAS, LOSEL..................-0.3V to (V
= -40°C to +85°C, unless otherwise noted. Typical values are at V
= 770MHz, T
........................................................................-0.3V to +5.5V
_______________________________________________________________________________________
= +5.0V, T
PARAMETER
PARAMETER
A
A
= +25°C, unless otherwise noted.)
= +25°C, unless otherwise noted.) (Notes 1, 2)
CC
CC
= +4.75V to +5.25V, P
= +4.75V to +5.25V, no RF signals applied, all RF inputs and outputs terminated with 50Ω,
SYMBOL
SYMBOL
I
LOSEL
V
I
V
V
CC
P
CC
f
G
f
NF
IH
IL
f
RF
LO
LO
IF
C
Must meet RF and LO frequency range. IF
matching components affect IF frequency
range.
V
f
low-side injection,
P
P
f
Inject P
LO port. Measure 100MHz at IF port as
P
100MHz IF,
low-side
injection
IF
RF
CC
RF
LO
OUT
CC
= 100MHz,
= 825MHz to 915MHz, 3σ
= 0dBm,
= -5dBm
= +5.0V,
LO
. No RF signal at RF port.
+ 0.3V)
IN
= -5dBm to +5dBm, f
= -20dBm at f
CONDITIONS
CONDITIONS
A
Cellular band,
f
GSM band,
f
= -40°C to +85°C, unless otherwise noted. Typical values are at
RF
RF
Continuous Power Dissipation (T
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
36-Pin QFN (derate 33mW/°C above +70°C)..............2200mW
= 825MHz to 850MHz
= 880MHz to 915MHz
CC
LO
+ 100MHz into
= +5.0V, P
Cellular band,
f
850MHz
GSM band,
f
to 915MHz
RF
RF
RF
= 825MHz to
= 880MHz
= 825MHz to 915MHz, f
RF
= -5dBm, P
MIN
825
725
4.75
MIN
260
70
3.5
-5
-5
A
= +70°C)
LO
LO
±0.6
TYP
10.8
11.9
TYP
5.00
2.7
2.1
= 0dBm, f
291
53
= 725MHz to 1085MHz,
MAX
1085
MAX
915
170
5.25
+5
325
0.4
+5
RF
= 870MHz,
UNITS
UNITS
MHz
MHz
MHz
dBm
mA
dB
dB
dB
dB
µA
V
V
V