MMBT3904-7-F Diodes Inc, MMBT3904-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT3904-7-F
• Description: TRANS NPN 40V 350MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT3904-7-F

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3904-FDITR

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
MMBT3904
Document number: DS30036 Rev. 18 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
400
350
300
250
200
150
100
50
4. Short duration pulse test used to minimize self-heating effect.
0
0
R
25
θJA
T , AMBIENT TEMPERATURE (°C)
= 417 C/W
A
50
°
Characteristic
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
CEX
h
NF
2 of 4
I
h
h
h
f
t
t
BL
obo
t
t
FE
ibo
oe
ie
re
fe
T
d
s
r
f
0.65
Min
100
100
300
6.0
1.0
0.5
1.0
0.001
60
40
40
70
60
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.01
0.1
1
0.1
T = 25°C
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
A
Max
0.20
0.30
0.85
0.95
300
400
200
V , COLLECTOR-EMITTER VOLTAGE (V)
4.0
8.0
8.0
5.0
50
50
10
40
35
35
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
x 10
Unit
MHz
nA
nA
kΩ
μS
dB
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
1
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
DC
= 10μA, I
= 10mA, I
= 10μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 50mA, V
= 100mA, V
= 50mA, I
= 10mA, I
= 50mA, I
Pw = 100ms
= 1.0kΩ, f = 1.0kHz
= I
= 30V, V
= 30V, V
= 10V, I
= 5.0V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
= 3.0V, I
= 3.0V, I
B2
= - 0.5V, I
= 1.0mA
Test Condition
C
10
E
B
B
B
B
C
C
B
C
EB(OFF)
EB(OFF)
C
C
= 0
= 0
CE
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA,
= 10mA,
CE
CE
CE
CE
= 0
= 100μA,
= 10mA,
= 10mA,
= 1.0V
= 1.0V
= 1.0V
B1
= 1.0V
= 1.0V
Pw = 10ms
MMBT3904
= 1.0mA
= 3.0V
= 3.0V
© Diodes Incorporated
December 2008
C
E
= 0
= 0
100