AH128-89G TriQuint, AH128-89G Datasheet

AH128-89G

Manufacturer Part Number

AH128-89G

Description

RF Amplifier 1/4W HI LIN HBT AMP 50-3500MHz

Manufacturer

TriQuint

Type

General Purpose Amplifierr

Datasheet

1.AH128-89G.pdf (14 pages)

Specifications of AH128-89G

Operating Frequency

3500 MHz

Noise Figure

4.6 dB at 2140 MHz

Maximum Operating Temperature

+ 200 C

Mounting Style

SMD/SMT

Number Of Channels

1 Channel

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

1070583

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AH128-89G

Manufacturer:

TriQuint

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AH128-89G

Manufacturer:

TRIQUINT

Quantity:

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Product Features

•

Applications

•

Specifications

1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.

2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

3. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product

Absolute Maximum Ratings

Operation of this device above any of these parameters may cause permanent damage.

TriQuint Semiconductor Inc • Phone 1-503-615-9000• FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com

AH128

¼W High Linearity InGaP HBT Amplifier

for 1960 MHz and 10 dBm/tone for 2140 MHz.

is used to calculate the OIP3 using a 2:1 rule. Measured at 13 dBm/tone for 900 MHz, 11 dBm/tone

Parameter

Operational Bandwidth

Test Frequency

Gain

Input Return Loss

Output Return Loss

W-CDMA Channel Power

Output P1dB

Output IP3

Noise Figure

Quiescent Collector Current

Device Voltage

Parameter

Storage Temperature

RF Input Power, CW, 50 Ω, T=25°C

Device Voltage

Max Junction Temperature, T

Thermal Resistance, Θ

60 – 3500 MHz

+25 dBm P1dB

+40 dBm Output IP3

16.9 dB Gain @ 2140 MHz

115 mA current draw

+5V Single Supply

MTTF > 100 Years

Lead-free/Green/RoHS-compliant

SOT-89 Package

Repeaters

Mobile Infrastructure

WiMAX / WiBro

LTE / WCDMA / EDGE / CDMA

For 10

@ -50 dBc ACLR, 2140 MHz

hours MTTF

(3)

(2)

Units Min

MHz

dBm

Rating

-65 to +150 °C

Input P10dB

+6 V

200 °C

116 °C / W

The AH128 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able to achieve high performance across a broad range with

+40 dBm OIP3 and +25 dBm of compressed 1dB power

while drawing 115 mA current. The AH128 is available in

a lead-free/green/RoHS-compliant SOT-89 package.

devices are 100% RF and DC tested.

The AH128 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity, medium power,

and high efficiency are required. Internal biasing allows

the AH128 to maintain high linearity over temperature and

operate directly off a single +5V supply. This combination

makes the device an excellent candidate for transceiver line

cards in current and next generation multi-carrier 3G base

stations.

14.5

+36

Typ

2140

16.9

+15

+25

+40

115

4.6

Product Description

Max

3500

130

Typical Performance

Ordering Information

Standard T/R size = 1000 pieces on a 7” reel.

Parameter

Frequency

Gain

Input Return Loss

Output Return Loss

Output P1dB

Output IP3

Noise Figure

Quiescent Collector Current

Device Voltage

Part No.

AH128-89G

AH128-89PCB900

AH128-89PCB1960

AH128-89PCB2140

AH128-89PCB2600

@ -50 dBc ACLR

CDMA Channel Power

(3)

Specifications and information are subject to change without notice

Description

¼ W High Linearity InGaP HBT Amplifier

869-960 MHz Evaluation Board

1930-1990 MHz Evaluation Board

2110-2170 MHz Evaluation Board

2500-2700 MHz Evaluation Board

All

(2)

Functional Diagram

Units

MHz

dBm

RF Output / Vcc

RF IN

Function

RF Input

Ground

+24.7

19.7

920

+15

+40

8.2

4.6

GND

Typical

Page 1 of 14 June 2010

+15.5

+25.5

1960

17.6

+40

115

4.6

RF OUT

Pin No.

2, 4

2140

16.9

+15

+25

+40

4.6

Related parts for AH128-89G

AH128-89G Summary of contents

Page 1

... Output P1dB Output IP3 +25 Noise Figure +36 +40 Quiescent Collector Current 4.6 Device Voltage 95 115 130 +5 Ordering Information Part No. AH128-89G AH128-89PCB900 AH128-89PCB1960 AH128-89PCB2140 AH128-89PCB2600 Standard T/R size = 1000 pieces on a 7” reel. Functional Diagram GND 4 All GND Function RF Input RF Output / Vcc ...

Page 2

... AH128 ¼W High Linearity InGaP HBT Amplifier S-Parameters (V Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency expected that actual gain will be higher the maximum stable gain. The maximum stable gain is shown in the red line. ...

Page 3

... The edge placed 105 mils from the AH128 RFin pin. (4.4 5. The edge placed 40 mils from the edge of R1. (1.7 6. The edge placed 135 mils from the AH128 RFout pin. (5.6 7. The edge placed 75 mils from the edge of L3. (3.1 Return Loss T=25° ...

Page 4

... The edge placed at 285 mils from AH128 RFout pin. (14 5. The edge placed against the edge of R2. 6. The edge placed at 100 mils from AH128 RFin pin The edge of C10 is placed 260 mils from the edge of R1. (13 Return Loss 0 -5 -10 ...

Page 5

... AH128 ¼W High Linearity InGaP HBT Amplifier 869-960 MHz Reference Design (AH128-89PCB900) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10 0.01% Probability, 3.84 MHz BW Noise Figure vs. Frequency vs. Temperature +85°C +25°C -40°C 0 0.86 0.88 0.90 0.92 0.94 Frequency (GHz) TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com OIP3 vs ...

Page 6

... The edge placed at 310 mils from AH128 RFout pin. (48.8 5. The edge placed at 100 mils from AH128 RFin pin. (15.7 6. The edge of C10 is placed 150 mils from the edge of R1. (23.6 ...

Page 7

... The edge placed at 265 mils from AH128 RFout pin. (29 5. The edge placed against the edge of C9. 6. The edge placed at 100 mils from AH128 RFin pin. (11 7. The edge of C10 is placed 220 mils from the edge of R1. (24 S11 vs Bias Voltage T=25°C ...

Page 8

... AH128 ¼W High Linearity InGaP HBT Amplifier 1930-1990 MHz Reference Design (AH128-89PCB1960) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10 0.01% Probability, 3.84 MHz BW OIP3 vs. Frequency T=25°C, 1 MHz spacing, 11 dBm/tone 1.93 1.94 1.95 1.96 1.97 1.98 Frequency (GHz) OIP3 vs. Output Average Power vs. Bias Voltage T=25° ...

Page 9

... The edge placed at 250 mils from AH128 RFout pin. (29.6 5. The edge placed at 100 mils from AH128 RFin pin. (12 6. The edge of C10 is placed 180 mils from the edge of R1. (21.3 Return Loss 0 ...

Page 10

... AH128 ¼W High Linearity InGaP HBT Amplifier 2110-2170 MHz Reference Design (AH128-89PCB2140) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10 0.01% Probability, 3.84 MHz BW Noise Figure vs. Frequency vs. Temperature +85°C +25°C -40°C 0 2.10 2.12 2.14 2.16 2.18 Frequency (GHz) T=25°C, 1 MHz spacing, 10 dBm/tone ...

Page 11

... The edge placed at 245 mils from AH128 RFout pin (31.9 5. The edge placed at 100 mils from AH128 RFin pin (13.0 6. The edge of C10 is placed 80 mils from the edge of R1 (10.4 Gain vs. Frequency T=25° ...

Page 12

... Components shown on the silkscreen but not on the schematic are not used Ω jumpers can be replaced with copper trace in target application. 4. The left edge placed 210 mils from the right edge of the AH128 RFout pin (27.9°@2400MHz). 5. The right edge placed adjacent to the AH128 RFin pin. ...

Page 13

... The edge placed at 230 mils from AH128 RFout pin. (32 5. The edge placed at 100 mils from AH128 RFin pin. (14 6. The edge of C10 is placed 45 mils from the edge of R1. (6.2 Return Loss vs. Frequency T=25°C ...

Page 14

... TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Mechanical Information Product Marking The AH128 will be marked with an “AH128G” designator with a lot code marked below the part designator. The “Y” represents the last digit of the year the part was manufactured, the “XXX” auto- generated number, and “ ...

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