BGA 427 H6327 Infineon Technologies, BGA 427 H6327 Datasheet - Page 4

• Manufacturer Part Number: BGA 427 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon MMIC Amplifierr

Specifications of BGA 427 H6327

• Operating Frequency: 1.8 GHz
• P1db: 7 dBm
• Noise Figure: 2.2 dB
• Operating Supply Voltage: 6 V
• Supply Current: 25 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-343
• Minimum Operating Temperature: - 65 C
• Other names: BGA427H6327XT

IS =
Package Equivalent Circuit:
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
All parameters are ready to use, no scaling is necessary
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
IN
L
BO
2
0.21024
39.251
1.7763
34.368
1.3152
1.3491
3.7265
4.5899
1.3364
0.99532
1.4935
0
3
C
2
C
C
1
BE
L
BI
fA
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
C
CB
11
BGA 427
N =
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
Chip
14
12
L
L
L
GND
1
EI
EO
13
C’-E’-
Diode
1.02
83.23
0.16493
10.526
0.25052
15
1.9289
0.70367
0.3641
0
0.48652
0
0
0.99469
L
CI
4
C
C
3
CE
L
L
CO
2
-
-
A
-
A
V
-
deg
-
fF
-
-
EHA07382
OUT
+V
RS =
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
L
L
L
L
L
L
C
C
C
C
C
C
L
L
Valid up to 3GHz
BI
BO
EI
EO
CI
CO
1
2
BE
CB
CE
1
2
3
=
=
=
=
=
=
=
=
=
=
=
=
=
=
20
1.0405
15.761
0.96647
0.037223
0.21215
0.12691
0.37747
0.19762
96.941
0.08161
0.75
1.11
300
6
132
28
88
8
0.6
0.4
0.36
0.4
0.3
0.15
0.36
0.4
95
2007-07-12
BGA427
-
fA
-
fA
A
-
V
fF
-
V
eV
K
fF
fF
fF
fF
fF
nH
nH
nH
nH
nH
nH
nH
nH
fF