TIP140G ON Semiconductor, TIP140G Datasheet - Page 4

• Manufacturer Part Number: TIP140G
• Description: TRANS DARL NPN 10A 60V TO218AC
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of TIP140G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 10A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 5A, 4V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 10 A
• Maximum Collector Cut-off Current: 1000 uA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Current, Gain: 500
• Current, Input: 0.5 A
• Current, Output: 10 A
• Package Type: SOT-93 (TO-218)
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 35.7
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TIP140GOS

5000
2000
1000
500
300
5.0
3.0
2.0
1.0
0.7
0.5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
−75
−75
0.5
NPN
TIP140, TIP141, TIP142
−50
T
J
= 150°C
−25
−25
1.0
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
I
T
T
C
J
J
, COLLECTOR CURRENT (AMPS)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
0
100°C
V
CE
25
25
= 4.0 V
25°C
2.0
50
−55 °C
Figure 3. DC Current Gain versus Collector Current
3.0
75
75
I
I
I
Figure 4. Collector−Emitter Saturation Voltage
C
C
C
= 10 A, I
= 5.0 A, I
= 1.0 A, I
4.0
100
TYPICAL CHARACTERISTICS
5.0
B
Figure 5. Base−Emitter Voltage
V
B
B
125 150
125
CE
= 4.0 mA
= 10 mA
= 2.0 mA
I
C
= 4.0 V
= 10 A
7.0
5.0 A
1.0 A
http://onsemi.com
175
175
10
4
20,000
10,000
7000
5000
3000
2000
1000
5.0
3.0
2.0
1.0
0.7
0.5
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
−75
−75
0.5
PNP
TIP145, TIP146, TIP147
−50
0.7
−25
−25
1.0
T
T
I
T
C
J
J
J
, COLLECTOR CURRENT (AMPS)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
= 150°C
0
25
25
V
2.0
CE
50
= 4.0 V
I
I
100°C
−55 °C
C
C
25°C
3.0
= 10 A, I
= 5.0 A, I
75
75
I
C
100
4.0
= 1.0 A, I
B
B
= 4.0 mA
= 10 mA
5.0
V
125
125
CE
I
B
C
= 4.0 V
= 10 A
= 2.0 mA
5.0 A
1.0 A
7.0
150
175
175
10