2N6487G ON Semiconductor, 2N6487G Datasheet - Page 4

• Manufacturer Part Number: 2N6487G
• Description: TRANS NPN 15A 60V TO-220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of 2N6487G

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 3.5V @ 5A, 15A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 5A, 4V
• Power - Max: 1.8W
• Frequency - Transition: 5MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 15 A
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 75 W
• Maximum Operating Frequency: 5 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 5 A at 4 V
• Minimum Operating Temperature: - 65 C
• Current, Collector: 15 A
• Current, Gain: 150
• Frequency: 5 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.67 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 70 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 3.5 V
• Voltage, Emitter To Base: 5 V
• Collector Emitter Voltage V(br)ceo: 60V
• Transition Frequency Typ Ft: 5MHz
• Power Dissipation Pd: 1.8W
• Dc Collector Current: 15A
• Dc Current Gain Hfe: 5
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N6487G; 2N6487GOS

5.0
2.0
1.0
0.5
0.2
0.1
5000
1000
20
10
500
200
100
500
200
100
5.0
50
20
10
50
2.0
0.2
0.2
T
Figure 5. Active-Region Safe Operating Area
CURVES APPLY BELOW RATED V
J
= 150°C
V
4.0
V
CE
CE
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
0.5
t
= 2.0 V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
f
0.5
NPN
PNP
- 55°C
I
25°C
C
I
C
Figure 6. Turn-Off Time
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
V
I
I
T
C
B1
1.0
10
J
1.0
NPN
2N6487, 2N6488
CC
/I
= 25°C
B
t
= I
s
T
= 30 V
= 10
J
B2
2N6487, 2N6490
2N6488, 2N6491
= 150°C
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
2.0
2.0
20
CEO
C
= 25°C
40
5.0
5.0
60
Figure 8. DC Current Gain
10
10
dc
100 ms
500 ms
http://onsemi.com
1.0 ms
5.0 ms
80
20
20
4
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
500
200
100
1000
5.0
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
50
20
10
700
300
200
100
70
50
0.2
0.5
V
CE
- 55°C
= 2.0 V
T
1.0
J(pk)
25°C
0.5
J
= 25°C
C
C
NPN
PNP
I
ob
ib
C
, COLLECTOR CURRENT (AMP)
V
may be calculated from the data in
Figure 7. Capacitances
R
T
2.0
, REVERSE VOLTAGE (VOLTS)
J
1.0
PNP
2N6490, 2N6491
= 150°C
2.0
C
ob
5.0
J(pk)
10
5.0
= 150_C; T
20
10
C
- V
J(pk)
C
20
CE
50
is