TIP125G ON Semiconductor, TIP125G Datasheet - Page 4

• Manufacturer Part Number: TIP125G
• Description: TRANS DARL PNP 5A 60V TO220AB
• Manufacturer: ON Semiconductor
• Type: Medium Power, Switchr

Specifications of TIP125G

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 4V @ 20mA, 5A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 3A, 3V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 5 A
• Maximum Collector Cut-off Current: 200 uA
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Current, Gain: 2500
• Current, Input: 120 mA
• Current, Output: 5 A
• Package Type: TO-220AB
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 62.5
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Input: 2.5 V
• Voltage, Output: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: TIP125GOS

approx
approx
+ 8.0 V
-12 V
V
V
R
D
t
DUTY CYCLE = 1.0%
r
2
1
1N5825 USED ABOVE I
MSD6100 USED BELOW I
, t
B
1
0
f
MUST BE FAST RECOVERY TYPE, eg:
0.07
0.05
0.03
0.02
0.01
& R
≤ 10 ns
1.0
0.7
0.5
0.3
0.2
0.1
0.01
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
Figure 2. Switching Times Test Circuit
0.01
0.02
0.05
0.1
0.2
D = 0.5
0.02
25 ms
SINGLE PULSE
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
B
≈ 100 mA
B
0.05
≈ 100 mA
51
for t
and V
For NPN test circuit reverse all polarities.
d
0.1
and t
2
R
= 0
D
B
1
+ 4.0 V
r
, D
0.2
1
is disconnected
≈ 8.0 k ≈ 120
TUT
0.5
R
Figure 4. Thermal Response
C
- 30 V
V
http://onsemi.com
CC
1.0
SCOPE
2.0
t, TIME (ms)
4
0.07
0.05
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
0.1
qJC(t)
J(pk)
5.0
qJC
= 1.92°C/W MAX
V
I
I
T
- T
C
B1
CC
J
= r(t) R
/I
= 25°C
B
= I
C
= 30 V
10
= 250
= P
B2
0.2 0.3
t
s
qJC
(pk)
1
Z
Figure 3. Switching Times
qJC(t)
20
I
C
, COLLECTOR CURRENT (AMP)
0.5 0.7 1.0
50
t
d
@ V
P
(pk)
t
f
BE(off)
PNP
NPN
DUTY CYCLE, D = t
100
t
1
= 0
2.0 3.0
t
2
200
t
r
1
5.0 7.0
/t
2
500
1.0 k
10