MJD3055G ON Semiconductor, MJD3055G Datasheet

MJD3055G

Manufacturer Part Number

MJD3055G

Description

TRANS POWER NPN 10A 60V DPAK

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.MJD3055G.pdf (6 pages)

2.MJD3055G.pdf (4 pages)

Specifications of MJD3055G

Transistor Type

NPN

Current - Collector (ic) (max)

10A

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

8V @ 3.3A, 10A

Current - Collector Cutoff (max)

50µA

Dc Current Gain (hfe) (min) @ Ic, Vce

20 @ 4A, 4V

Power - Max

1.75W

Frequency - Transition

2MHz

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Collector- Emitter Voltage Vceo Max

60 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

10 A

Maximum Dc Collector Current

10 A

Power Dissipation

20 W

Maximum Operating Frequency

2 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

20 at 4 A at 4 V

Minimum Operating Temperature

- 55 C

Current, Collector

10 A

Current, Gain

Frequency

2 MHz

Package Type

DPAK

Polarity

NPN

Primary Type

Resistance, Thermal, Junction To Case

6.25 °C/W

Voltage, Breakdown, Collector To Emitter

60 V

Voltage, Collector To Base

70 V

Voltage, Collector To Emitter

60 V

Voltage, Collector To Emitter, Saturation

8 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJD3055G
MJD3055GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJD3055G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJD3055G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 4
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MJD2955 (PNP)

MJD3055 (NPN)

Complementary Power

Transistors

DPAK For Surface Mount Applications

applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must

1. These ratings are applicable when surface mounted on the minimum pad

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Derate above 25°C

Total Power Dissipation (Note1)

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

(Note1)

be observed.

Designed for general purpose amplifier and low speed switching

(No Suffix)

Lead Formed for Surface Mount Applications in Plastic Sleeves

Straight Lead Version in Plastic Sleeves (“−1” Suffix)

Electrically Similar to MJE2955 and MJE3055

DC Current Gain Specified to 10 Amperes

High Current Gain−Bandwidth Product − f

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings: Human Body Model, 3B u 8000 V

Pb−Free Packages are Available

sizes recommended.

@ T

Derate above 25°C

Characteristic

= 25°C

Rating

Machine Model, C u 400 V

= 25°C

Symbol

, T

CEO

qJC

qJA

{

stg

= 2.0 MHz (Min) @ I

= 500 mAdc

−55 to +150

0.014

Max

0.16

1.75

Max

6.25

71.4

W/°C

°C/W

Unit

Vdc

Adc

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1 2

POWER TRANSISTORS

60 VOLTS, 20 WATTS

ORDERING INFORMATION

Jxx55 = Device Code

10 AMPERES

CASE 369C

CASE 369D

STYLE 1

DPAK−3

SILICON

DPAK

= Year

= Work Week

= Pb−Free Package

x = 29 or 30

DIAGRAMS

MARKING

xx55G

YWW

xx55G

YWW

Related parts for MJD3055G

MJD3055G Summary of contents

Page 1

MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in ...

Page 2

... MJD2955 MJD2955G MJD2955−001 MJD2955−001G MJD2955T4 MJD2955T4G MJD3055 MJD3055G MJD3055T4 MJD3055T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MJD2955 (PNP) MJD3055 (NPN 25_C unless otherwise noted) ...

Page 3

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2 ...

Page 4

MJD2955 (PNP) MJD3055 (NPN −T− SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B C NOTES ...

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