2SC4132T100R Rohm Semiconductor, 2SC4132T100R Datasheet
2SC4132T100R
Manufacturer Part Number
2SC4132T100R
Description
TRANS NPN 120V 1.5A SOT-89
Manufacturer
Rohm Semiconductor
Specifications of 2SC4132T100R
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
2V @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 5V
Power - Max
2W
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
2 A
Maximum Dc Collector Current
3 A
Power Dissipation
2 W
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
80 MHz
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC4132T100R
2SC4132T100RTR
2SC4132T100RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC4132T100R
Manufacturer:
ROHM
Quantity:
56 000
Company:
Part Number:
2SC4132T100R
Manufacturer:
NSC
Quantity:
2 927
Part Number:
2SC4132T100R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857
1) High breakdown voltage. (BV
2) Low collector output capacitance.
3) High transition frequency. (f
4) Complements the 2SB1236.
*
*
*
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Output capacitance
*
DC current transfer ratio
Transition frequency
Denotes h
Features
Absolute maximum ratings (Ta = 25 C)
1 Single pulse Pw = 10ms
2 When mounted on a 40
Packaging specifications and h
Electrical characteristics (Ta = 25 C)
(Typ. 20pF at V
Basic ordering unit (pieces)
Measured using pulse current.
Parameter
FE
Package
Marking
Parameter
Code
Type
h
FE
2SC4132
2SD1857
CB
40
= 10V)
0.7mm ceramic board.
2SC4132
Symbol
MPT3
PQR
T100
1000
V
V
V
Tstg
I
P
CB
CBO
CEO
EBO
I
Tj
CP
C
C
Symbol
BV
BV
BV
V
*
T
Cob
I
I
CE(sat)
CBO
EBO
h
f
T
= 80MHz)
CBO
CEO
EBO
FE
CEO
2SD1857
PQR
2500
ATV
TV2
= 120V)
FE
55~+150
Min.
Limits
120
120
82
120
120
150
5
0.5
5
2
3
2
1
Typ.
80
20
Max.
390
0.4
Unit
1
1
W
V
V
V
A
A
C
C
MHz
Unit
pF
*
*
V
V
V
V
A
A
1
2
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
/I
= 50 A
= 1mA
= 50 A
B
/I
= 100V
= 4V
= 5V , I
= 10V , I
= 1A/0.1A
External dimensions (Units : mm)
C
2SC4132
2SD1857
= 5V/0.1A
ROHM : MPT3
EIAJ : SC-62
ROHM : ATV
E
E
= 0.1A , f = 30MHz
= 0A , f = 1MHz
Conditions
0.65Max.
( 1 )
2.54
( 2 )
6.8
1.0
2.54
( 3 )
2SC4132 / 2SD1857
( 1 )
( 2 )
( 3 )
0.5
4.0
2.5
Taping specifications
*
*
1.05
0.5
2.5
0.45
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Emitter
(2) Collector
(3) Base
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2SC4132T100R Summary of contents
Page 1
Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 Features 1) High breakdown voltage. (BV = 120V) CEO 2) Low collector output capacitance. (Typ. 20pF 10V High transition frequency 80MHz Complements the ...
Page 2
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