NJT4030PT1G ON Semiconductor, NJT4030PT1G Datasheet
NJT4030PT1G
Specifications of NJT4030PT1G
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NJT4030PT1G Summary of contents
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NJT4030P Bipolar Power Transistors PNP Silicon Features Collector - -Emitter Sustaining Voltage - - Vdc (Min CEO(sus) High DC Current Gain - - h = 200 (Min 100 ...
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... Junction--to--Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR--4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds ORDERING INFORMATION Device NJT4030PT1G NJT4030PT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector--Emitter Sustaining Voltage ( mAdc Adc Emitter--Base Voltage ( mAdc Adc Collector Cutoff Current ( Vdc) CB Emitter Cutoff ...
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T C 1 100 T , TEMPERATURE (C) J Figure 1. Power Derating http://onsemi.com 4 125 150 ...
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I , COLLECTOR CURRENT (A) C Figure 2. DC Current Gain 0.1 0.01 0.001 0.001 0.01 0 COLLECTOR ...
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1.1 1.0 0.9 --40C 0.8 0.7 25C 0.6 0.5 0.4 150C 0.3 0.2 0.1 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 8. Base- -Emitter Saturation Voltage 350 300 ...
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... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...