BC857BLT1G ON Semiconductor, BC857BLT1G Datasheet - Page 3

• Manufacturer Part Number: BC857BLT1G
• Description: TRANS PNP LP 100MA 45V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC857BLT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 220
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC857BLT1GOSTR

-2.0
-1.6
-1.2
-0.8
-0.4
2.0
1.5
1.0
0.7
0.5
0.3
0.2
7.0
5.0
3.0
2.0
1.0
10
0
-0.4
-0.2
I
-10 mA
-0.02
-0.6
C
V
T
=
A
CE
-0.5 -1.0
Figure 1. Normalized DC Current Gain
Figure 3. Collector Saturation Region
= 25°C
= -10 V
-1.0
I
C
V
Figure 5. Capacitances
-0.1
I
, COLLECTOR CURRENT (mAdc)
R
C
, REVERSE VOLTAGE (VOLTS)
-2.0
= -20 mA
-2.0
I
B
, BASE CURRENT (mA)
-5.0 -10
I
C
-4.0 -6.0
C
= -50 mA
ib
C
-1.0
ob
-20
T
-10
A
= 25°C
T
I
C
I
A
C
= -200 mA
-50 -100 -200
= 25°C
= -100 mA
BC857/BC858/BC859
-20 -30 -40
http://onsemi.com
-10
-20
3
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
400
300
200
150
100
2.4
2.8
1.0
1.2
1.6
2.0
80
60
20
40
30
0
-0.5
-0.1 -0.2
Figure 4. Base−Emitter Temperature Coefficient
T
Figure 6. Current−Gain − Bandwidth Product
A
-0.2
Figure 2. “Saturation” and “On” Voltages
= 25°C
-55°C to +125°C
-1.0
-0.5 -1.0 -2.0
I
I
C
C
I
-2.0 -3.0
, COLLECTOR CURRENT (mAdc)
C
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mA)
V
-1.0
V
V
BE(on)
CE(sat)
BE(sat)
@ V
@ I
@ I
-5.0
CE
C
C
/I
/I
B
B
= -10 V
= 10
-5.0
= 10
-10
-10
-10
-20
-20 -30
V
T
A
CE
= 25°C
= -10 V
-50 -100
-100
-50