BC 856B E6327 Infineon Technologies, BC 856B E6327 Datasheet - Page 7

• Manufacturer Part Number: BC 856B E6327
• Description: TRANSISTOR PNP AF 65V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BC 856B E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 250 at 10 uA at 5 V
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC 856B E6327; BC856BE6327INTR; BC856BE6327XT; SP000012935

Transition frequency f
V
Total power dissipation P
BC856-BC860
f
T
CE
MHz
mW
10
10
10
360
300
270
240
210
180
150
120
5
5
= 5 V
90
60
30
3
2
1
10
0
0
-1
15
30
5
45
10
0
60
T
75
= ƒ(I
5
90 105 120
tot
10
= ƒ(T
C
1
)
S
EHP00378
mA
Ι
)
C
T
°C
S
10
150
2
7
Collector-base capacitance C
Emitter-base capacitance C
Total power dissipation P
BC857BF, BC858BF
mW
pF
300
250
225
200
175
150
125
100
12
10
75
50
25
9
8
7
6
5
4
3
2
1
0
0
0
0
15
4
30
45
8
CEB
60
BC856...-BC860...
75
12
90 105 120 °C
tot
eb
= ƒ(T
16
cb
2008-04-29
= ƒ(V
= ƒ(V
S
V
)
V
T
EB
CB
S
CCB
CB
)
(V
150
22
)
EB
)