MMBT2907ALT1G ON Semiconductor, MMBT2907ALT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT2907ALT1G
• Description: TRANS GP SS PNP 60V SOT23
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MMBT2907ALT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 300mW
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -600 mA
• Current, Gain: 50
• Frequency: 200 MHz
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -60 V
• Voltage, Collector To Base: -60 V
• Voltage, Collector To Emitter: -60 V
• Voltage, Collector To Emitter, Saturation: -1.6 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 111806; MMBT2907ALT1GOS; MMBT2907ALT1GOS; MMBT2907ALT1GOSTR

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
Turn−Off Time
Storage Time
Fall Time
0
-16 V
Collector−Emitter Breakdown Voltage (Note 4)
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current
(V
(V
Base Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (Note 4)
Base −Emitter Saturation Voltage (Note 4)
Current −Gain − Bandwidth Product (Notes 4, 5),
Output Capacitance (V
Input Capacitance (V
INPUT
Z
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
T
(I
(I
CB
CB
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
o
Figure 1. Delay and Rise Time Test Circuit
C
C
C
C
C
C
C
C
C
C
C
C
is defined as the frequency at which |h
= 50 W
200 ns
= −50 Vdc, I
= −50 Vdc, I
= −1.0 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −150 mAdc, V
= −500 mAdc, V
= −150 mAdc, I
= −500 mAdc, I
= −150 mAdc, I
= −500 mAdc, I
= −50 mAdc, V
E
E
= 0)
= 0, T
B
B
CE
CE
B
B
B
B
CE
CE
EB
= 0)
CE
CE
= 0)
50
CE
= −15 mAdc) (Note 4)
= −50 mAdc)
= −15 mAdc)
= −50 mAdc)
CB
= −10 Vdc)
= −20 Vdc, f = 100 MHz)
= −2.0 Vdc, I
= −10 Vdc)
= −10 Vdc)
1.0 k
= −10 Vdc)
= −10 Vdc) (Note 4)
A
= −30 Vdc, V
= −10 Vdc, I
CE
= 125°C)
= −30 Vdc, V
Characteristic
E
C
-30 V
200
C
= −10 mAdc, I
E
EB(off)
= 0, f = 1.0 MHz)
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
= −10 mAdc, I
= 0, f = 1.0 MHz)
(T
fe
EB(off)
A
| extrapolates to unity.
= 25°C unless otherwise noted)
= −0.5 Vdc)
(V
CC
(V
(V
= −0.5 Vdc)
= −30 Vdc, I
CC
CC
C
E
= 0)
I
= −6.0 Vdc, I
= −6.0 Vdc, I
B1
I
I
= 0)
B1
B1
http://onsemi.com
= −15 mAdc)
= I
= I
B2
B2
C
= −15 mAdc)
= −15 mAdc)
= −150 mAdc,
C
C
2
= −150 mAdc,
= −150 mAdc,
0
-30 V
Figure 2. Storage and Fall Time Test Circuit
INPUT
Z
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
o
200 ns
= 50 W
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
C
h
CEX
CBO
I
t
t
f
BL
obo
on
t
t
FE
t
off
t
ibo
T
d
s
r
f
50
1.0 k
−5.0
Min
−60
−60
−60
100
100
100
200
+15 V
75
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.0 k
1N916
-6.0 V
−0.010
37
Max
−0.4
−1.6
−1.3
−2.6
−50
−10
−50
300
100
8.0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
30
45
10
40
80
30
−
−
−
−
−
−
−
−
−
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
−