MMBT2907ALT1G ON Semiconductor, MMBT2907ALT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT2907ALT1G
• Description: TRANS GP SS PNP 60V SOT23
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MMBT2907ALT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 300mW
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -600 mA
• Current, Gain: 50
• Frequency: 200 MHz
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -60 V
• Voltage, Collector To Base: -60 V
• Voltage, Collector To Emitter: -60 V
• Voltage, Collector To Emitter, Saturation: -1.6 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 111806; MMBT2907ALT1GOS; MMBT2907ALT1GOS; MMBT2907ALT1GOSTR

Initial Product/Process Change Notification #16009
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Issue Date: 08 May 2007
Rev.07-02-06
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