MMBT6427-7 Diodes Zetex, MMBT6427-7 Datasheet
MMBT6427-7
Manufacturer Part Number
MMBT6427-7
Description
TRANS NPN DARL 40V SMD SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.MMBT6427-7-F.pdf
(3 pages)
Specifications of MMBT6427-7
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
MMBT6427DITR
MMBT6427TR
MMBT6427TR
MMBT6427TR
MMBT6427TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT6427-7-F
Manufacturer:
Diodes Inc
Quantity:
28 488
Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 2) @ T
Thermal Resistance, Junction to Ambient (Note 2)@ T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30048 Rev. 9 - 2
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 4)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking (See Page 3): K1D
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
Characteristic
Characteristic
Characteristic
@T
A
= 25°C
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
= 25°C
www.diodes.com
E
B
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
TOP VIEW
CE(SAT)
BE(SAT)
I
I
BE(ON)
C
B
I
C
h
CBO
CEO
EBO
1 of 3
obo
FE
ibo
C
G
H
D
C
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
A
E
10,000
20,000
14,000
E
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Symbol
Symbol
T
Min
J
40
40
12
⎯
⎯
⎯
⎯
⎯
⎯
J
V
V
V
8.0 Typical
15 Typical
R
B C
, T
P
CBO
CEO
EBO
I
K
θ JA
C
D
STG
100,000
200,000
140,000
L
2
Max
1.75
O
1.0
1.2
1.5
2.0
50
50
⎯
⎯
⎯
3
Fire Retardants.
M
Unit
nA
μA
nA
pF
pF
⎯
V
V
V
V
V
V
-55 to +150
Value
Value
500
300
417
40
40
12
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
C
C
E
C
C
C
C
C
C
C
CB
CE
EB
CB
EB
= 10μA, I
= 50mA, I
= 100μA, I
= 10mA, I
= 10mA, V
= 100mA, V
= 500mA, V
= 500mA, I
= 500mA, I
= 50mA, V
= 25V, I
= 10V, I
= 30V, I
= 10V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
MMBT6427
Dim
All Dimensions in mm
M
A
B
C
D
E
G
H
K
J
L
α
Test Condition
C
B
C
E
E
B
CE
= 0
B
B
B
CE
= 0
= 0
= 0
CE
CE
= 0
= 0
= 0.5mA
= 0.5mA
= 0.5mA
=5.0V
SOT-23
= 5.0V
= 5.0V
= 5.0V
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
0°
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
°C
E
V
V
V
C
= 0
MMBT6427
= 0
0.180
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8°
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MMBT6427-7 Summary of contents
Page 1
... V = 25V 10V 10mA 5. ⎯ 100mA 5. 500mA 5. 1 50mA 0.5mA 1 500mA 0.5mA 500mA 0.5mA 50mA, V =5. 10V 1.0MHz 0.5V 1.0MHz Fire Retardants © Diodes Incorporated Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° MMBT6427 ...
Page 2
... Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 100 1000 100 www.diodes.com 1 10 100 I , COLLECTOR CURRENT (mA COLLECTOR CURRENT (mA) C Fig. 4, Base Emitter Voltage vs. Collector Current © Diodes Incorporated 1000 100 MMBT6427 ...
Page 3
... Ordering Information (Note 5) Device MMBT6427-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 Code Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...