2SC4793(F,M) Toshiba, 2SC4793(F,M) Datasheet
2SC4793(F,M)
Manufacturer Part Number
2SC4793(F,M)
Description
TRANS NPN 230V 1A 2-10R1A
Manufacturer
Toshiba
Specifications of 2SC4793(F,M)
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
230V
Vce Saturation (max) @ Ib, Ic
1.5V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
2-10R1A (TO-220 NIS)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
230 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1 A
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
100 MHz
Number Of Elements
1
Collector-emitter Voltage
230V
Collector-base Voltage
230V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
100
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220(NIS)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SC4793(F,M)
2SC4793(Q)
2SC4793F,M
2SC4793FM
2SC4793Q
2SC4793Q
2SC4793(Q)
2SC4793F,M
2SC4793FM
2SC4793Q
2SC4793Q
Power Amplifier Applications
Driver Stage Amplifier Applications
•
•
Maximum Ratings
Electrical Characteristics
Marking
High transition frequency: f
Complementary to 2SA1837
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Characteristics
Characteristics
C4793
Ta = 25°C
Tc = 25°C
(Tc = 25°C)
TOSHIBA Transistor Silicon NPN Epitaxial Type
T
= 100 MHz (typ.)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Tc = 25°C)
V
V
Symbol
Symbol
(BR) CEO
V
V
V
CE (sat)
I
I
T
V
h
C
CBO
EBO
P
CBO
CEO
EBO
I
I
T
f
stg
FE
BE
C
B
T
ob
C
j
2SC4793
V
V
I
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
−55 to 150
= 10 mA, I
= 500 mA, I
Rating
= 5 V, I
= 230 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
230
230
150
0.1
2.0
20
5
1
1
C
C
C
Test Condition
B
C
E
= 0
= 100 mA
= 500 mA
B
E
= 0
= 0, f = 1 MHz
= 100 mA
= 50 mA
= 0
Unit
°C
°C
W
V
V
V
A
A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
230
100
―
―
―
―
―
―
Typ.
100
20
―
―
―
―
―
―
2-10R1A
2004-07-26
2SC4793
―
―
Max
320
1.0
1.0
1.5
1.0
―
―
―
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
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2SC4793(F,M) Summary of contents
Page 1
... TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency 100 MHz (typ.) T • Complementary to 2SA1837 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta = 25°C Collector power dissipation Tc = 25° ...
Page 2
I – 1 0.8 6 0 0.2 Common emitter Tc = 25° Collector-emitter voltage V ( – ...
Page 3
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...